UV-LED exposure system for low-cost photolithography

Yapıcı, Murat Kaya; Farhat, Ilyas A. H.

doi:10.1117/12.2046123

Cited by 16 publications

(9 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Nowadays, LEDs are considered to be a proper replacement for these traditional gas discharge lamps. With the recent advancement of UV-LEDs and the availability of various wavelengths, researchers are moving towards an easier and more convenient UV-LED light source exposure system [10,11]. It has also been demonstrated how a specific wavelength of UV-LED can be a good replacement for traditional UV lamps that contains multiple-wavelength peaks [12] and can achieve success in maskless photolithography as well [13].…”

Section: Introductionmentioning

confidence: 99%

3D Microlithography Using an Integrated System of 5-mm UV-LEDs with a Tilt-Rotational Sample Holder

et al. 2020

View full text Add to dashboard Cite

This paper demonstrates a 3D microlithography system where an array of 5 mm Ultra Violet-Light Emitting Diode (UV-LED) acts as a light source. The unit of the light source is a UV-LED, which comes with a length of about 8.9 mm and a diameter of 5 mm. The whole light source comprises 20 × 20 matrix of such 5 mm UV-LEDs giving a total number of 400 LEDs which makes it a very favorable source with a large area for having a batch production of the desired microstructures. This light source is able to give a level of precision in microfabrication which cannot be obtained using commercial 3D printers. The whole light source performs continuous rotational movement once it is turned on. This can also move up and down in a vertical direction. This multidirectional light source also comprises a multidirectional sample holder. The light source teaming up with the multidirectional sample holder highly facilitates the process of fabrication of a huge range of 3D structures. This article also describes the different levels of characterization of the system and demonstrates several fabricated 3D microstructures including high aspect ratio vertical micro towers, twisted turbine structures, triangles, inclined pillar ‘V’ structures, and hollow horn structures as well.

show abstract

Section: Introductionmentioning

confidence: 99%

3D Microlithography Using an Integrated System of 5-mm UV-LEDs with a Tilt-Rotational Sample Holder

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Ultraviolet light emitting diode (UV LED) has the advantages of small size, long lifetime, and high efficiency. It is used in fluorescence detection, high-resolution microscope, UV exposure, UV curing, medical application, biological analysis, and other fields have a wide range of application prospects [1][2][3]. According to the peak wavelength of the spectrum, ultraviolet LED is divided into three categories: UVA (315 nm < λ ≤ 420 nm), UVB (280 nm < λ ≤ 315 nm), and UVC (200 nm < λ ≤ 280 nm).…”

Section: Introductionmentioning

confidence: 99%

The Effect of Package Structure on the Light Extraction Efficiency of Near-Ultraviolet LED

2019

International Journal of Photoenergy

View full text Add to dashboard Cite

The near-ultraviolet high-power LED, with five package structures, is designed and fabricated. The efficiency of electric conversion to light (EECL) of various package structures is measured, and the EECL is used to characterize the light extraction efficiency (LEE) of the package structure. By analyzing the Fresnel loss (FNL) and total inner reflection loss (TIRL) of light at different interfaces, the experimental results are explained qualitatively. When approximate spherical lens is used, filling silica gel between chip and lens can improve the LEE. The EECL of the device can reach 66.84%, which is higher than that of bare chip by 55.10%. In planar packaging, the EECL of the device is lower than that of the bare chip, whether or not it is filled with silica gel. After filling with silica gel, a new TIRL is produced at the final interface of the device, and the EECL of the device is even lower, which is only 37.14%. The experimental results show that when the LED chip adopts graphic substrate and surface microstructure to improve the LEE, the traditional coating of silica gel (or epoxy) and other materials on the chip surface may not improve the LEE of the device. If the introduction of the silica gel layer leads to a new total inner reflection interface, it will result in a significant decrease in LEE of the device. When a layer, such as silica gel, does not result in a new total reflection interface, the FNL and TIRL of the chip surface can be effectively reduced, and the LEE of the LED device can be improved.

show abstract

“…Современные УФ светодиоды имеют более высокий КПД, срок службы порядка 25 тыс. ч, отсутствие теплового излучения, не требуют специальной утилизации [1][2][3][4].…”

Section: Introductionunclassified