UV laser micromachining of piezoelectric ceramic using a pulsed Nd:YAG laser

Zeng, Dawen; Li, K.; Yung, Kam Chuen; Chan, Helen Lai Wah; Choy, C. L.; Xie, Changsheng

doi:10.1007/s00339-002-1956-9

Cited by 18 publications

(9 citation statements)

References 16 publications

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“…At first sight it is therefore surprising that a Zr rich surface oxide shows a distinct core level binding energy with respect to that of Zr in PZT. However, the XPS data in the literature shows that the Zr binding energy is (181.4 ±0.1) eV in PZT [10,24,35,32,36,37,38,39,40,41,42,43,44,45,46] and (182.4 ±0.3) eV in ZrO 2 [47,48,49,50,51,52,53,54,55,56], in excellent agreement with the 1 eV shift measured here. Beyond the immediate chemical environment of the Zr emitter, two other effects may influence the BE shift.…”

Section: Discussionsupporting

confidence: 90%

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

Gueye

Rhun

Gergaud

et al. 2016

Applied Surface Science

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We present a study of the chemistry of the nanostructured phase at the surface of lead zirconium titanate PbZr 0.52 Ti 0.48 O 3 (PZT) films synthesized by sol-gel method. In sol-gel synthesis, excess lead precursor is used to maintain the target stoichiometry. Surface nanostructures appear at 10% excess lead precursor whereas 30% excess precursor inhibits their formation. Using the surface-sensitive, quantitative X-ray photoelectron spectroscopy and glancing angle X-ray diffraction we have shown that the chemical composition of the nanostructures is ZrO 1.82−1.89 rather than pyrochlore often described in the literature. The presence of a possibly discontinuous layer of wide band gap ZrO 1.82−1.89 could be of importance in determining the electrical properties of PZT-based metal-insulator-metal heterostructures.

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Section: Discussionsupporting

confidence: 90%

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

Gueye

Rhun

Gergaud

et al. 2016

Applied Surface Science

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“…According to this law, the optical penetration depth due to light absorption in a material is inversely proportional to the absorption coefficient, α , thereby enabling an estimate of the depth of efficient absorption at a given wavelength. With the absorption coefficient, α = 30 µm -1 for PZT at 248 nm [10], the equation has given an etch rate of 154-160 nm/pulse for PLZT and ~140-147 nm/pulse for PSZT films at 125 J/cm 2 . With the absorption coefficient, α = 30 µm -1 for PZT at 248 nm [10], the equation has given an etch rate of 154-160 nm/pulse for PLZT and ~140-147 nm/pulse for PSZT films at 125 J/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

“…The addition of >1 mole % La in PZT has been reported to reduce grain size by inhibiting grain growth [9]. The low boiling point of PbO has resulted in the preferential evaporation and depletion of this component in the liquid [10]. At the high temperatures of laser ablation, PZT has been reported to undergo a thermally induced decomposition into solid ZrO 2 and a liquid phase of PbO and PbTiO 3 [10].…”

Section: Resultsmentioning

confidence: 99%

Excimer Laser Induced Patterning of PSZT and PLZT Flms

Leech¹,

Holland²

2007

MRS Proc.

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The patterning of strontium-doped lead zirconium titanate (PSZT) and lanthanum-doped lead zirconium titanate (PLZT) films has been examined using excimer laser radiation. Both types of film were deposited by rf magnetron sputtering using in-situ heating and a controlled cooling rate in order to obtain the perovskite-oriented phase. The depth of laser ablation in both PSZT and PLZT films showed a logarithmic dependence on fluence. The threshold fluence required to initiate ablation was ~1.25 mJ/cm 2 for PLZT and ~1.87 mJ/cm 2 for PSZT films. The ablation rate of PLZT films was slightly higher than that of PSZT films over the range of fluence (10-150 J/cm 2 ) and increased linearly with number of pulses. The higher ablation rate of PLZT films has been attributed to the finer grain size (160-200 nm) than in the PSZT films (1.0-1.2 µm).

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“…The ablation characteristics of the two ceramics showed similar trends except for surface morphologies, which revealed virtually no melting in Al 2 O 3 but clear evidence of melting for AlN [34][35][36]. Bärsch et al, 2007, studied microstructuring of zirconium ceramics by femtosecond laser, whereas Zeng et al, 2007, used nanosecond Nd: YAG laser [37,38].…”

Section: Laser Micromachining Of Ceramicsmentioning

confidence: 95%

Laser Micromachining of Glass, Silicon, and Ceramics

Riháková

Chmelíčková

2015

Advances in Materials Science and Engineering

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A brief review is focused on laser micromachining of materials. Micromachining of materials is highly widespread method used in many industries, including semiconductors, electronic, medical, and automotive industries, communication, and aerospace. This method is a promising tool for material processing with micron and submicron resolution. In this paper micromachining of glass, silicon, and ceramics is considered. Interaction of these materials with laser radiation and recent research held on laser material treatment is provided.

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UV laser micromachining of piezoelectric ceramic using a pulsed Nd:YAG laser

Cited by 18 publications

References 16 publications

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

Excimer Laser Induced Patterning of PSZT and PLZT Flms

Laser Micromachining of Glass, Silicon, and Ceramics

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