2022
DOI: 10.1088/1361-6528/ac46b2
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UV-enhanced NO2 gas sensors based on In2O3/ZnO composite material modified by polypeptides

Abstract: This present study reported a high-performance gas sensor, based on In2O3/ZnO composite material modified by polypeptides, with a high sensibility to NO2, where the In2O3/ZnO composite was prepared by a one-step hydrothermal method. A series of results through material characterization technologies showed the addition of polypeptides can effectively change the morphology and size of In2O3/ZnO crystals, and effectively improve the sensing performance of the gas sensors. Due to the single shape and small size, I… Show more

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Cited by 9 publications
(2 citation statements)
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“…In 2 O 3 , a typical n-type semiconductor, has been widely used to detect hazardous gases because of its wide band gap, fast saturation electron migration, and low resistivity [11,12]. When volatile organic compound (VOC) molecules stick to the surface of In 2 O 3 , it not only impacts the electron concentration on the surface of indium oxide, which affects its conductivity, but also alters the electronic state of the surface of indium oxide, which subsequently affects its electrical resistivity properties.…”
Section: Introductionmentioning
confidence: 99%
“…In 2 O 3 , a typical n-type semiconductor, has been widely used to detect hazardous gases because of its wide band gap, fast saturation electron migration, and low resistivity [11,12]. When volatile organic compound (VOC) molecules stick to the surface of In 2 O 3 , it not only impacts the electron concentration on the surface of indium oxide, which affects its conductivity, but also alters the electronic state of the surface of indium oxide, which subsequently affects its electrical resistivity properties.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] In 2 O 3 doped with Sn, that is, indium tin oxide (ITO), is widely employed as a transparent electrode in (opto)electronic devices, [4] including organic light emitting diodes, [3,5] solar cells, [6,7] field effect transistors, [8] and other devices. [3,[9][10][11] Unintentionally doped In 2 O 3 shows an inherent n-type conductivity, as a surface electron accumulation layer (SEAL) is commonly formed within only a few nanometers at the top surface. [12] This is similar to other transparent oxides, for example, ZnO, [13] Ga 2 O 3 , [14] and SnO 2 , [15] for which the partially filled conduction band can be directly detected by ultraviolet photoemission spectroscopy (UPS).…”
Section: Introductionmentioning
confidence: 99%