UV and soft x-ray emission from gaseous and solid targets employing SiC detectors

Abstract

A ns Nd:YAG pulsed laser has been employed to produce plasma from the interaction with a dense target, generating continuum and UV and soft x-ray emission depending on the laser parameters and target properties. The laser hits solid and gaseous targets producing plasma in high vacuum, which was investigated by employing a silicon carbide detector. The two different interaction mechanisms were studied, as well as their dependence on the atomic number. The photon emission from laser-generated plasma produced by solid targets, such as boron nitride (BN) and other elements (Al, Cu, Sn and Ta) and compounds such as polyethylene, has been compared with that coming from plasma produced by irradiating different gas-puff targets based on N2 and other gases (Ar, Xe, Kr, SF6). The experimental results demonstrated that the yields are comparable and, in both cases, increase proportionally to the target atomic number. The obtained results, focusing the attention on the advantages and drawbacks of the employed targets, are presented and discussed.

SiC and Si detectors comparison for high carbon energy spectrometry

“…behind a light absorber. This effect cannot be seen by SiC detectors, even to thinner surface metallizations or interdigitated metallizations, due to their greater energy gap, which produces background only for UV and X-ray detection but not for visible radiation, in agreement with the literature [20][21][22].…”

Optimization for Ion Detection and Recognition From Laser-Generated Plasma Using SiC Detectors Connected in Time-of-Flight Acquisition

“…Such spectra and ionization potentials of the ion charges indicated that the plasma temperature increases with the atomic number of the target, literature data reporting that the plasma temperature increases with the plasma electron density, i.e., with the atomic number of the irradiated target [8]. The evaluated plasma temperatures, not directly measured, but only approximated by the above considerations, have been reported as a function of the atomic number of the laser irradiated targets, as reported in Fig.…”

“…At this intensity, nanosecond (ns) lasers can be employed for different applications, such as for hot plasma generation in the vacuum, ion source production, ion acceleration and post-acceleration, thin-film deposition, X-ray production, production of nanoparticles in liquids, polymers welding, thermal treatments of surfaces, induction of oxidation and reduction processes in different materials, and others [8], [9].…”

SiC and Ion collectors as diagnostics of laser-generated plasma at intensity of 1010W/cm2

“…The detection efficiency of such detectors is only limited by their thickness and absorption in the contact film on the input window, thus uncovered surfaces can be employed to reveal UV and low energetic ions [12]. Moreover, SiC detectors have been used with active region depth from some microns up to 80 microns, to detect low energy and high energy ions and soft and hard X-rays, respectively [13,14].…”