Utilization of AZO/Au/AZO multilayer electrodes instead of FTO for perovskite solar cells

Dang, Tran-Van; Pammi, S.V.N.; Choi, Jihoon; Yoon, Soon‐Gil

doi:10.1016/j.solmat.2017.01.008

Cited by 46 publications

(16 citation statements)

References 29 publications

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“…As observed in Figure a, the performances of cells under AM1.5G illumination vary between 8% and 15%, mostly due to variations in J sc and FF (not shown). To the best of our knowledge, the champion cell with a PCE of 14.95% outperforms previous works on perovskite solar cells fabricated on AZO by almost 3% increase in absolute efficiency . We also measured the efficiency under AM0 illumination, which reached up to 13.6% PCE with J sc of 26.6 mA cm −2 .…”

Section: Resultsmentioning

confidence: 68%

“…To the best of our knowledge, the champion cell with a PCE of 14.95% outperforms previous works on perovskite solar cells fabricated on AZO by almost 3% increase in absolute efficiency. [22][23][24][25] We also measured the efficiency under AM0 illumination, which reached up to 13.6% PCE with J sc of 26.6 mA cm À2 . The J-V curves under AM1.5G and AM0 illumination for the champion cell are shown in Figure 1b.…”

Section: Introductionmentioning

confidence: 99%

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Radiation Hardness of Perovskite Solar Cells Based on Aluminum‐Doped Zinc Oxide Electrode Under Proton Irradiation

et al. 2019

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Perovskite solar cells (PSCs) have gained increasing interest for space applications. However, before they can be deployed into space, their resistance to ionizing radiations, such as high-energy protons, must be demonstrated. Herein, the effect of 150 keV protons on the performance of PSCs based on aluminumdoped zinc oxide (AZO) transparent conducting oxide (TCO) is investigated. A record power conversion efficiency of 15% and 13.6% is obtained for cells based on AZO under AM1.5G and AM0 illumination, respectively. It is demonstrated that PSCs can withstand proton irradiation up to 10 13 protons cm À2 without significant loss in efficiency. From 10 14 protons cm À2 , a decrease in short-circuit current of PSCs is observed, which is consistent with interfacial degradation due to deterioration of the Spiro-OMeTAD holes transport layer during proton irradiation. The structural and optical properties of perovskite remain intact up to high fluence levels. Although shallow trap states are induced by proton irradiation in perovskite bulk at low fluence levels, charges are released efficiently and are not detrimental to the cell's performance. This work highlights the potential of PSCs based on AZO TCO to be used for space applications and gives a deeper understanding of interfacial degradation due to proton irradiation.

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Section: Resultsmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Radiation Hardness of Perovskite Solar Cells Based on Aluminum‐Doped Zinc Oxide Electrode Under Proton Irradiation

et al. 2019

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“…Opto-elektronik uygulamalarda yaygın olarak tercih edilen geçirgen iletken oksit filmler, flor katkılı kalay oksit (FTO) ve indiyum katkılı kalay oksittir (ITO) [4]. İndiyum kaynaklarının tükenmesi, kalay maliyetinin yükselmesi, ITO'nun toksik olması ve 300 C'nin üzerinde tavlandığında direncinin önemli derecede artması, FTO'nun ısıya dirençli olmasına rağmen yüksek direnç sergilemesi bilim insanlarını geçirgen oksit filmler için yeni arayışlara yöneltmiştir [1,[5][6][7]. Çinko oksit (ZnO), düşük malzeme maliyeti, stabil olması, çözelti tabanlı olarak kolayca sentezlenmesi ve toksik olmamasından dolayı geçirgen iletken oksit film üretimi için dikkat çekici bir alternatiftir.…”

Section: Introductionunclassified

Ultrasonik Sprey Piroliz ile Üretilen ZnO İnce Filmlerin Alttaş Sıcaklıklarının Yapısal ve Optik Özelliklerine Etkisi

Koç

2021

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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Özet: Bu çalışmada, ZnO ince filmler; 350, 400 ve 450 °C üç farklı sıcaklıktaki alttaşa ultrasonik sprey piroliz yöntemi ile biriktirilmiştir. ZnO ince film üretiminde çinko kaynağı olarak çinko asetat dihidrat (Zn(CH3COO)2.2H2O) kullanılmıştır. Yapılan XRD analizleri, ZnO ince filmlerin, nano boyutta hekzagonal yapıda ve baskın pik pozisyonunun (100) düzleminde olduğunu doğrulamıştır. Kristal tane boyutu Debye-Scherrer formülü kullanılarak hesaplanmış ve 324.7-442.3 Å aralığında bulunmuştur. SEM yüzey görüntüleri incelendiğinde ZnO ince filmlerin homojen bir şekilde kaplandığı ve SEM kesit görüntülerinden kalınlıkların 251-286 nm aralığında değiştiği görülmektedir. Filmlerin yüzey pürüzlülüğü AFM ile incelenmiş ve yüzey pürüzlülük değerleri 23.00-43.44 nm aralığında elde edilmiştir. ZnO ince filmlerin UV spektrumlarından, optik geçirgenlikleri %80' in üzerinde bulunurken, yasak enerji aralıkları 3.13-3.26 eV olarak bulunmuştur.

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“…16 Due to their wide bandgap, > 3 eV ð Þ AZO films are preferably used as a front contact material in Cu In,Ga ð ÞSe 2 thin-film solar cells, as this permits the transmittance of photons incident on the solar cell and enables active charge collection from the CdS buffer layer. 17 Furthermore, they are widely used as transparent conducting contacts in silicon, 18 perovskite, 19 and dye-sensitized 20 solar cells. In the above-mentioned solar cell applications, low sheet resistance and high optical transmission (above 80%) in the near-infrared and visible regimes are necessary for effective performance.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Al-Doped ZnO Films Assisted with Hollow-Cathode Glow Discharge and Their Characterization

Queiroz

Naeem

Filho

et al. 2021

J. Electron. Mater.

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Transparent conductive oxides, such as aluminum-doped zinc oxide (AZO), are of substantial importance for use in a broad range of applications because of their excellent optical and electrical properties. AZO film can be deposited by using several conventional techniques, although they suffer from limitations such as long deposition time, high cost, and the requirement for complex deposition equipment. Here, we used hollow-cathode glow discharge, which produces a high-density plasma and achieves high deposition efficiency. Remarkably, instead of metallic target materials, we used Al 2 O 3 and ZnO powders filled in the hollow cathode as a target, thus avoiding the need for specifically designed targets in this technique. The films were deposited using mixtures of argon and oxygen at various ratios (0% to 50% oxygen), to improve the film characteristics. The films deposited under all conditions exhibited hexagonal wurtzite ZnO structure, while the grain size increased with increasing oxygen content. The film was thick and porous when using low oxygen content, but became thin and dense with increasing oxygen content. The optical transmittance was found to be strongly dependent on the processing gases used, with the highest transmittance of 84% being attained when using 25% oxygen gas. The bandgap of the films lay between 3.27 eV and 3.33 eV. The highest carrier concentration and mobility were attained when using 25% oxygen, and the Hall resistivity decreased with increasing oxygen content. Besides the excellent transmittance and electrical properties of the deposited films, it is expected that the results of this study will be useful for solar cells and optoelectronic applications due to the relatively low cost of this technique and the lack of specific target requirements.

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Utilization of AZO/Au/AZO multilayer electrodes instead of FTO for perovskite solar cells

Cited by 46 publications

References 29 publications

Radiation Hardness of Perovskite Solar Cells Based on Aluminum‐Doped Zinc Oxide Electrode Under Proton Irradiation

Radiation Hardness of Perovskite Solar Cells Based on Aluminum‐Doped Zinc Oxide Electrode Under Proton Irradiation

Ultrasonik Sprey Piroliz ile Üretilen ZnO İnce Filmlerin Alttaş Sıcaklıklarının Yapısal ve Optik Özelliklerine Etkisi

Synthesis of Al-Doped ZnO Films Assisted with Hollow-Cathode Glow Discharge and Their Characterization

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