Using pattern enumeration to accelerate process development and ramp yield

Zhuang, Linda; Pang, Jenny; Xu, Jessy; Tsai, Meng‐Feng; Wang, Amy; Zhang, Yifan; Sweis, Jason; Lai, Yuen-Liang; Ding, Hua

doi:10.1117/12.2219129

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Hotspot Detection At An Early Stage Of New Technology Node Development1

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“…profiling method is used on generated test key patterns to determine potential yield detractors on new incoming products and take actions to avoid them [52] . The failing image contours, which are the hotspots detected in real layouts, are presented in Fig.…”

Section: Hotspot Detection At An Early Stage Of New Technology Node Developmentmentioning

confidence: 99%

Advanced process and electron device technology

Zhang¹,

Su²,

Chang³

et al. 2022

Tsinghua Sci. Technol.

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This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore's law will undoubtedly continue in the next 15 years.

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Section: Hotspot Detection At An Early Stage Of New Technology Node Developmentmentioning

confidence: 99%