Using MeV ion backscattering/channeling and MC simulations to characterize the composition and structure of buried metal–metal interfaces

Smith, Richard J.; Ramana, C. V.; Choi, Bum Sik; Saleh, Adli A.; Shivaparan, N. R.; Shutthanandan, V.

doi:10.1016/s0169-4332(03)00629-9

Cited by 6 publications

(2 citation statements)

References 20 publications

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“…4 We have extensively investigated the composition, structure and stability of TM-Al single crystal systems ͑TM = Fe,Ti,Zr,Co,Ni,Pd,Ag͒ over the last several years. [5][6][7][8][9][10] For most of the systems studied, intermixing of TM atoms with the single-crystal Al substrate was observed in the first few monolayers of TM deposition before the onset of growth of TM rich films. In previous studies of interface intermixing of sputter-deposited polycrystalline bilayers, a large amount of intermixing was observed for many TM/Al systems at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Fe-Al interface intermixing and the role of Ti, V, and Zr as a stabilizing interlayer at the interface

Priyantha

Smith

Chen

et al. 2009

Journal of Applied Physics

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The chemical mixing at the "Al on Fe" and "Fe on Al" interfaces was studied by molecular dynamics simulations of the layer growth and by 57 Fe M€ ossbauer spectroscopy. The concentration distribution along the layer growth direction was calculated for different crystallographic orientations, and atomically sharp "Al on Fe" interfaces were found when Al grows over (001) and (110) oriented Fe layers. The Al/Fe(111) interface is also narrow as compared to the intermixing found at the "Fe on Al" interfaces for any orientation. Conversion electron M€ ossbauer measurements of trilayers-Al/ 57 Fe/Al and Al/ 57 Fe/Ag grown simultaneously over Si(111) substrate by vacuum evaporation-support the results of the molecular dynamics calculations. V C 2015 AIP Publishing LLC. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Fe-Al interface intermixing and the role of Ti, V, and Zr as a stabilizing interlayer at the interface

Priyantha

Smith

Chen

et al. 2009

Journal of Applied Physics

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“…Films of Pd, Fe, Ni and Co were all shown to mix with and displace the substrate Al atoms from their equilibrium lattice positions at room temperature [4]. On the other hand, Ti films grow as an epitaxial, pseudomorphic fcc overlayer.…”

Section: Introductionmentioning

confidence: 99%

Atomistic modeling of Ag deposition on the low-index faces of Al and Al deposition on Ag

2005

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The evolution of composition and structure at metal-metal interfaces: Measurements and simulations

Smith

Applied Computational Materials Modeling

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Using MeV ion backscattering/channeling and MC simulations to characterize the composition and structure of buried metal–metal interfaces

Cited by 6 publications

References 20 publications

Fe-Al interface intermixing and the role of Ti, V, and Zr as a stabilizing interlayer at the interface

Fe-Al interface intermixing and the role of Ti, V, and Zr as a stabilizing interlayer at the interface

Atomistic modeling of Ag deposition on the low-index faces of Al and Al deposition on Ag

The evolution of composition and structure at metal-metal interfaces: Measurements and simulations

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