Using Mather-Type Plasma Focus Device for Fabrication of Tungsten Thin Films

Hosseinnejad, Mohammad Taghi; Shirazi, Marzieh; Ghorannevis, Zohreh; Ghoranneviss, M.; Shahgoli, Farhad

doi:10.1007/s10894-011-9488-y

Cited by 10 publications

(3 citation statements)

References 31 publications

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“…The further details of the plasma Focus facilities are reported elsewhere [31]. A schematic arrangement of the experimental setup along with the focus subsystem is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Growth, characterization, and investigation of H2 gas sensing performance of Al-doped ZnO thin films synthesized by plasma focus device

Hosseinnejad

Ghoranneviss

Hantehzadeh

et al. 2016

J Mater Sci: Mater Electron

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This paper reports characterization of Al-doped ZnO (AZO) thin films deposited on glass substrates at room temperature by a low energy (1.3 kJ) plasma focus device using a ZnO target with an Al content of 3wt%. A particular focus of investigation is on properties relevant to the usage of thin films as hydrogen gas sensors. Indeed, the dependence of angular position of substrate on structural, morphological and gas sensing properties of AZO thin films is investigated. The results obtained from X-ray diffraction (XRD) reveal that all the films are of polycrystalline zinc oxide in nature, possessing hexagonal wurtzite structure. Also XRD results indicate strong dependence of crystallinity of deposited thin films on angular position of samples. Scanning electron microscopy and atomic force microscopy results reveal the structure growth and enhancement of surface roughness with decreasing the angle with respect to anode axis. The experiments and measurements involving the AZO deposited thin films towards hydrogen were carried out at different operating temperatures within 150-400°C for various concentrations of hydrogen in air. The H 2 sensing response enhanced with concentration and operating temperature, and reached its maximum at 300°C to 1000 ppm concentration of hydrogen gas. The results also indicated shorter response times for samples deposited at larger angular positions.

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“…The further details of the plasma Focus facilities are reported elsewhere [31]. A schematic arrangement of the experimental setup along with the focus subsystem is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Growth, characterization, and investigation of H2 gas sensing performance of Al-doped ZnO thin films synthesized by plasma focus device

Hosseinnejad

Ghoranneviss

Hantehzadeh

et al. 2016

J Mater Sci: Mater Electron

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“…In order to mitigate these issues, an innovative approach was proposed to deposit tungsten coatings on low-Z materials (such as graphite and C/C fiber composite) [3,4]. Nowadays, many coating techniques have been used to produce tungsten coatings on graphite substrates, i.e., physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma spray (PS), combined magnetron sputtering and ion implantation (CMSII) and electrodeposition [5][6][7]. Among these kinds of coating technologies, electrodeposition method has unique advantages to fabricate tungsten coatings due to its simplicity, low cost and the satisfied properties of the obtained tungsten coatings [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Properties of Electrodeposited Tungsten Coatings on Graphite Substrates for Plasma Facing Components

et al. 2016

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Tungsten coating on graphite substrate is considered as one of promising candidate materials of plasma facing components. In this study, tungsten coatings on graphite substrate were successfully prepared by direct current (DC) and pulse current (PC) electrodeposition methods in Na 2 WO 4 -WO 3 molten salt under the air atmosphere. Pores were found on the surfaces of the tungsten coatings produced by DC electrodeposition method. For the coatings fabricated by PC method, compact and smooth tungsten coatings were successfully obtained. The crystal structure, morphology, density, microhardness, adhesive strength, oxygen content and the thermal conductivity of the coatings fabricated by PC method were investigated. The obtained tungsten coatings had a body centered cubic structure. After electro-deposition for 100 h, the thickness of the tungsten coating reached 810.02 ± 10.40 lm and the oxygen content was 0.03 wt%. The thermal conductivity of the tungsten coating was 134.29 W m -1 K -1 . The density of the tungsten coating was 18.83 g cm -3 . The hardness of the coating was 492.0 ± 7.8 HV. After deuterium plasma irradiation, the tungsten coatings were prone to blistering.

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“…17 Especially energetic ions and electrons generated by a PF device have been used for surface modification, 18 thermal surface treatment, 19 ion implantation 20,.21 and thin-film deposition. [22][23][24][25] PF devices can be used for thin-film deposition because of various interesting features, such as high deposition rate, energetic deposition and the possibility of deposition under a reactive background gas at high pressure. For example, in recent years, nitrogen gas has been used in PF devices as a reactive background gas for the deposition of industrially important nitrides such as TiN 26 , WN 27 , GaAs 28 , AlN 29 and ZrN.…”

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confidence: 99%

Structural, Morphological and Mechanical Characterisation of Molybdenum Nitride Thin Films Deposited by a Plasma Focus Device

Hosseinnejad

Ettehadi-Abari

Panahi

2017

Journal of Chemical Research

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This research focuses on the characterisation of nanostructured molybdenum nitride (MoN) thin films deposited on glass substrates at room temperature using a low-energy (1.1 kJ) plasma focus device. The nanostructure, surface morphology, electrical resistivity and mechanical properties of MoN thin films were studied in terms of the number of shots required to prepare them. X-ray diffraction (XRD) analysis indicated that all of the deposited layers were polycrystalline in nature, possessing the γ-Mo2N (fcc) structure. The XRD results also revealed that the degree of crystallinity and residual stress of the thin films were strongly dependent on the number of shots. X-ray photoelectron spectroscopy showed the Mo 3d3/2, Mo 3d5/2, Mo 3p3/2 and N 1s peaks for all of the thin films, confirming the formation of the γ-Mo2N structure. Scanning electron microscopy images showed the growth of granular structures and then the formation of larger-sized agglomerates on the surfaces of the samples with increasing numbers of shots. Atomic force microscopy indicated that grain sizes on surface layers as well as the average and root mean square roughness increased for samples deposited with more shots. Furthermore, the variations in hardness and electrical resistivity of the deposited MoN thin films were qualitatively explained on the basis of the morphological properties of the samples.

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Using Mather-Type Plasma Focus Device for Fabrication of Tungsten Thin Films

Cited by 10 publications

References 31 publications

Growth, characterization, and investigation of H2 gas sensing performance of Al-doped ZnO thin films synthesized by plasma focus device

Growth, characterization, and investigation of H2 gas sensing performance of Al-doped ZnO thin films synthesized by plasma focus device

Properties of Electrodeposited Tungsten Coatings on Graphite Substrates for Plasma Facing Components

Structural, Morphological and Mechanical Characterisation of Molybdenum Nitride Thin Films Deposited by a Plasma Focus Device

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