Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN
Peter A Schultz,
Jesse J Lutz
Abstract:Using ground state density functional theory (DFT) and implementing an occupation-constrained DFT (occ-DFT) for self-consistent excited state calculations, we decipher the electronic structure of the Mn dopant and other 3d defects in GaN across the band gap. Our analysis, validated with broad agreement with defect levels (ground state calculations) and photoluminescence data (excited state calculations), mandates broad reinterpretation of 3d defect data in GaN. The MnGa defect spans stable charge states from (… Show more
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