Using giant magneto resistance stripes to efficiently generate direct voltage signals from alternating current excitations

Kleinlein, Johannes; Ocker, B.; Schmidt, G.

doi:10.1063/1.4871383

Cited by 12 publications

(9 citation statements)

References 17 publications

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“…4.6. It should be noted that an analogous diode effect due to GMR has also been observed [247][248][249]. Table 7 summarizes some of the key studies in the development of the spin transfer based spin diode and MTJ rectification and Fig.…”

Section: Spin-transfer Torque Rectification In Magnetic Tunnel Junctionsmentioning

confidence: 95%

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Electrical detection of magnetization dynamics via spin rectification effects

2016

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The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro-and nano-structured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook formate easy to be used for analyzing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

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Section: Spin-transfer Torque Rectification In Magnetic Tunnel Junctionsmentioning

confidence: 95%

“…One downside to MTJ based sensing is the complex device fabrication required. In this regard the recently realized GMR based diode effect may prove advantageous [247,248].…”

Section: Spintronic Microwave Sensing and Imagingmentioning

confidence: 99%

Electrical detection of magnetization dynamics via spin rectification effects

2016

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“…In this paper we report on a spin diode effect in an exchange-biased Spin Valve Giant Magnetoresistance (SV-GMR) strip, which is an alternative to AMR-or MTJ-based devices. Very recently, a similar SV-GMR strip has been investigated by Kleinlein et al 29 The authors, however, focused their attention mainly on its enhanced detection sensitivity when compared to an AMR-based device.…”

Section: Introductionmentioning

confidence: 99%

Rectification of radio-frequency current in a giant-magnetoresistance spin valve

et al. 2015

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We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a non-compensated Oersted field acting on the magnetic free layer appears. This field, in turn, is a driving force of magnetization precessions. Due to the GMR effect, resistance of the strip oscillates following the magnetization dynamics. This leads to rectification of the applied radio frequency current and induces a direct current voltage VDC . We present a theoretical description of this phenomenon and calculate the spin diode signal, VDC , as a function of frequency, external magnetic field, and angle at which the external field is applied. A satisfactory quantitative agreement between theoretical predictions and experimental data has been achieved. Finally, we show that the spin diode signal in GMR devices is significantly stronger than in the anisotropic magnetoresistance permalloy-based devices.

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“…Recently, it was shown that the giant magnetoresistive (GMR) microstripe exhibits more than ten times higher sensitivity compared with the FM microstripe. 11,22,23 These investigations have revealed the influencing factors of V DC such as the stripe width 23 and the interlayer coupling. 11,24 Changing the magnitude and the direction of the in-plane (IP) and out-of-plane (OOP) magnetic fields was reported to be effective in tailoring V DC and at resonant frequency (f R ) in MTJ-based STMD.…”

mentioning

confidence: 99%

Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe

Zhou

Zheng

et al. 2016

Applied Physics Letters

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The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (V DC) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (f R) and V DC are investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data. f R exhibits a jsin d H j dependence on the in-plane field angle (d H). V DC presents either jsin d H j or jsin2 d H cos d H j relation, depending on the magnitude of H ext. Optimized V DC of 24 lV is achieved under 4 mT magnetic field applied at d H ¼ 170. Under out-of-plane magnetic field, f R shows a cos 2h H reliance on the polar angle (h H), whereas V DC is sin h H dependent. The Oersted field of the DC bias current (I DC) modifies the effective field, resulting in shifted f R. Enhanced V DC with increasing I DC is attributed to the elevated contribution of spin-transfer torque. Maximum V DC of 35.2 lV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher I DC also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of f R and V DC in the GMR microstripe. The results further demonstrate a highly tunable f R and optimized V DC by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small or zero magnetic field.

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Using giant magneto resistance stripes to efficiently generate direct voltage signals from alternating current excitations

Cited by 12 publications

References 17 publications

Electrical detection of magnetization dynamics via spin rectification effects

Electrical detection of magnetization dynamics via spin rectification effects

Rectification of radio-frequency current in a giant-magnetoresistance spin valve

Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe

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