Using finite element method to calculate capacitance, inductance, characteristic impedance of open microstrip lines

Abstract

This paper has proposed a new completely integrated LC quadrature ILFD fabricated in the TSMC 0.35-m CMOS technology. The new ILFD uses no varactor to extend the locking range by varying the dc bias of the tail transistors in the ILFD. The locking range of the implemented ILFD is 2.92 GHz ϳ 4.26 GHz (41%). The measured phase noise of free-running ILFD is Ϫ118.3 dBc/Hz while the locked quadrature output phase noise is Ϫ126.7 dBc/Hz at 1 MHz offset frequency from the center oscillation frequency of 1.98 GHz, which is 8.4 dB lower than the free running ILFD. ACKNOWLEDGMENT

Quasi-TEM approach of coupled-microstrip lines and its application to the analysis of microstrip filters

“…Many methods have been used, e.g., method of moments [26], spectral domain analysis [27], method of lines [28,40], finitedifference methods [29], finite-element methods [30,31], and Fourier transform method [32]. In this study, the authors use an orthogonal expansion method, similar to the one in [33], to compute the per-length inductance and capacitance matrices.…”

Inhomogeneous Dirichlet Boundary Conditions in the Method of Computed Basis Functions

“…When the microstrip line operates at a low frequency, its capacitance (C), and inductance (L) per meter, and thus its characteristic impedance (Z 0 = (L/C) 1/2 ), can be obtained from static analysis. This requires solving the Laplace equation twice, once with all dielectric constants equal to 1 and once with the substrate is filled with dielectric ε r = 2.2 [6]. We assume a certain potential on the inner strip and a different potential on the ground conductor.…”

Finite Element Method Analysis of Symmetrical Coupled Microstrip Lines

“…Accurate methods for determining the capacitance and inductance for different geometries for microstrip lines in modern design techniques have become an area of interests to scientists and researchers [1][2]. Many industrial applications depend on different interrelated properties or natural phenomena and require multiphysics modeling and simulation as an efficient method to solve their engineering problems.…”