Using a MISiC-FET sensor for detecting NH/sub 3/ in SCR systems

Wingbrant, H.; Svenningstorp, Henrik; Salomonsson, Per; Kubinski, David J.; Visser, J.H.; Löfdahl, Mikael; Spetz, Anita Lloyd

doi:10.1109/jsen.2005.854489

Cited by 59 publications

(44 citation statements)

References 14 publications

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“…for example be due to a competition between the methanol and the water molecules for the available adsorption sites on the metal surface [20]. It is surprising that the influence of humidity in this study is much larger than in the previous studies for SiC FET devices [19], [20], [21], [22] for other gases. Different from hydrogen or ammonia, methanol might also react with water vapor and undergo partial oxidation or create complex molecules which give less response when adsorbed on the sensor surface.…”

Section: Hydrogen Propene and Humiditymentioning

confidence: 60%

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SiC-FET methanol sensors for process control and leakage detection

Darmastuti

Bhattacharyya

Andersson

et al. 2013

Sensors and Actuators B: Chemical

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Section: Hydrogen Propene and Humiditymentioning

confidence: 60%

“…These phenomena also occur in the case of CO [18] and NH 3 [19] detection with Pt-gate sensors. A comparison of Ir gate results in Fig.9 b indicates a more complicated chemistry on the Ir surface as compared to the Pt surface.…”

Section: Oxygenmentioning

confidence: 76%

SiC-FET methanol sensors for process control and leakage detection

Darmastuti

Bhattacharyya

Andersson

et al. 2013

Sensors and Actuators B: Chemical

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“…It is known that the influence of humidity on the sensing properties of field effect gas sensors is not as strong as for metal oxide gas sensors. It was reported that for MISiC-FETs the influence of water vapor is constant for humidity levels above 2% [4], [7] while there is strong humidity dependence for MOX sensors over practically the whole range [29], [30]. However, the influence was studied again due to the fact that the FET gas sensor is now run in TCO.…”

Section: Influence Of Water Vapormentioning

confidence: 99%

“…Metal insulator silicon carbide field effect transistors (MISiC FET), especially, seem to be suitable candidates for emission control and on board diagnostics (OBD) [5]. Since the introduction of selective catalytic reduction (SCR) of nitrogen oxides (NO x ) by ammonia (NH 3 ) in diesel engines [6], the detection of either ammonia (NH 3 ) [7] or nitrogen oxides (NO x ) [8], [9] have received increasing interest. Another possible automotive application of a MISiC FET is as a lambda-sensitive device for enhancing the efficiency of the catalytic converter [10].…”

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confidence: 99%

Increasing the Selectivity of Pt-Gate SiC Field Effect Gas Sensors by Dynamic Temperature Modulation

et al. 2012

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Abstract-Based on a diode coupled silicon carbide field effect transistor with platinum as catalytic gate material, the influence of dynamic temperature modulation on the selectivity of GasFETs has been investigated. This operating mode, studied intensively for semiconductor gas sensors, has only recently been applied to field effect transistors. A suitable temperature cycle (T-cycle) for detection of typical exhaust gases (CO, NO, C 3 H 6 , H 2 , NH 3 ) was developed and combined with appropriate signal processing. The sensor data was evaluated using multivariate statistics, e.g. linear discriminant analysis (LDA). Measurements have proven that typical exhaust gases can be discriminated in backgrounds with 0%, 10% and 20% oxygen. Furthermore, we are able to quantify the mentioned gases and to determine unknown concentrations based on training data. Very low levels of relative humidity (r.h.) below a few percent influence the sensor response considerably but for higher levels the cross interference of humidity is negligible. In addition, experiments regarding stability and reproducibility were performed.

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“…Moreover, SiC-FET sensors have shown promising results in industrial environments for CO [7,8] and NH 3 [6,9].…”

Section: Introductionmentioning

confidence: 99%

Hierarchical methods to improve the performance of the SiC-FET as SO2 sensors in flue gas desulphurization systems

Darmastuti

Bur

Lindqvist

et al. 2015

Sensors and Actuators B: Chemical

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Experiments were performed both in the laboratory and a desulfurization pilot unit in order to improve the SiC-FET sensor performance using two-step data evaluation. In both cases, a porous Pt-gate enhancement type SiC-FET was utilized in a temperature cycled operation (TCO). Liner Discriminant Analysis (LDA) was chosen as the method for multivariate data analysis. Hierarchical methods with two-step LDA worked quite well in the laboratory tests with SO 2 concentrations varied from 25-200 ppm. The same data evaluation was also applied to tests in the desulfurization pilot unit, with higher gas flow and a larger SO 2 concentration range (up to 5000 ppm). The results from the SO 2 quantification showed a significantly improved fit to corresponding reference instrument (FTIR) values. 2 IntroductionSO 2 has a significant impact on human health and the environment due to its ability to cause acid rain and form acid particulates. The majority of the emission comes from the energy sector [1]. The European Environmental Agency (EEA) has reported that in the last decade the SO 2 emission has decreased by about 74% and the majority of the reduction has come from power generation and distribution (58%) [2]. The EEA also stated [2] that the reduction in SO 2 has been the result of use of fuels with lower sulfur content and the increase in efficiency of desulfurization systems. However, these measures are not sufficient. The goal for future SO 2 emission reduction has been outlined according to stricter regulation. One way to achieve this goal is to improve the efficiency of the sulfur removal unit even more.In thermal power plants, SO 2 is produced as an unwanted by-product from the combustion of sulfur containing fuel, and it needs to be removed before venting the flue gas to the atmosphere. SO 2 is removed in a desulfurization system. Lime (Ca(OH) 2 ) is mixed with ash and injected into the dry desulfurization system to react with SO 2 in the gas phase. The resulting products are separated from the flue gas by a fabric filter before venting the flue gas to the atmosphere [3]. In this process, sensors play an important role, not only in detecting the concentration of SO 2 at the outlet of the unit, but also in monitoring the concentration profile throughout the duct. The latter application is important for maintaining concentration uniformity of the flue gas, and thus, for improving the efficiency of the desulfurization unit.SiC based sensors are suitable candidates for the desulfurization application due to the inert behavior of SiC in high temperature, oxidizing environments [4][5][6]. Moreover, SiC-FET sensors have shown promising results in industrial environments for CO [7,8] and NH 3 [6,9].The sensors are based on commercial transistor devices with porous catalytic metal gate on top of the gate oxide [4]. The target gas is adsorbed, and then decomposed upon interaction with oxygen ions on the catalytic metal surface. The interaction between the target gases and the metal surface changes the balance of the surf...

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Using a MISiC-FET sensor for detecting NH/sub 3/ in SCR systems

Cited by 59 publications

References 14 publications

SiC-FET methanol sensors for process control and leakage detection

SiC-FET methanol sensors for process control and leakage detection

Increasing the Selectivity of Pt-Gate SiC Field Effect Gas Sensors by Dynamic Temperature Modulation

Hierarchical methods to improve the performance of the SiC-FET as SO2 sensors in flue gas desulphurization systems

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