Using a combination of C-AFM and SCM for failure analysis of SRAM leakage in CMOS process with the addition of a DNW module

Lin, Hung Sung; Shu, Wen

doi:10.1109/ipfa.2009.5232704

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“…Nanoprobing and Conductive-AFM (C-AFM) techniques are widely used for physical fault isolation in failure analysis field [1]. However, purchasing a nanoprobe system is costly and setting up the system to measure a sample can be a timeconsuming process.…”

Section: Introductionmentioning

confidence: 99%

C-AFM analysis of advanced IC on SRAM high resistance failure

Leong

Zhang

Hoe

et al. 2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Section: Introductionmentioning

confidence: 99%

C-AFM analysis of advanced IC on SRAM high resistance failure

Leong

Zhang

Hoe

et al. 2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Applications of C-AFM analysis techniques at advanced IC on SRAM soft failure

Chong

Hoe

Lin

et al. 2010

2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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The application of the conductive atomic force microscope (C-AFM) has been widely reported as a useful method of failure analysis in semiconductor field of nanometer scale science and technology, [1] Especially for hard failure and soft failure identification and localization at logic and SRAM in CMOS process. This paper will demonstrate a new application of the C-AFM to identify the electric characteristic of SRAM soft failure in CMOS process. After taking electrical measurement, plain view SEM and cross-section TEM will reveal and understand the physical root cause of the electrical failure. After that, the principle of application for C-AFM on this SRAM soft failure analysis will be discussed.

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