Use of μ-Si:H Wide Band Gap N- and P-Type Materials for Producing Solar Cells by a TCDDC System

The physics of amorphous silicon thin-film devices and their application to document processing

“…It has been common to use a-Si : C : H (Hamakawa and Tawada 1982) and, more recently, pc-Si : C : H alloys (Guimaraes et al 1988) to improve solar cell characteristics, particularly the quantum efficiency in the blue part of the spectrum. Our work investigates how such materials affect photodiode sensors designed for scanning applications, where low dark current, linearity and fast response times are equally important parameters.…”

Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD

“…Furthermore, fine grained (20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30) A) RIc-Si shows a large band gap of 2.4 eV [4]. These are the reasons why gc-Si is used in the p-type layer of amorphous silicon solar cells [5,6]. Because the carrier mobilities in gic-Si are higher than in a-Si:H, lic-Si is under development for thin film devices.…”