Use of the Flying-Spot Scanner to Study Photosensitive Surfaces

Pantchechnikoff, J. I.; Lasof, S.; Kurshan, J.; Moore, A. R.

doi:10.1063/1.1746391

Review of Scientific Instruments

1952

DOI: 10.1063/1.1746391

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Use of the Flying-Spot Scanner to Study Photosensitive Surfaces

J. I. Pantchechnikoff

S. Lasof

J. Kurshan

et al.

Abstract: A flying-spot tube was used to scan a large-area germanium photocell with a minute light spot. The output of the cell was amplified by a wide-band amplifier which controlled the intensity of a kinescope driven in synchronism with the flying-spot scanner. The display on the kinescope is a map of the photosensitivity at the surface of the photocell. A similar technique was also used to measure the frequency response of the photocell.

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1959

1986

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Mapping the quality of semiconductor wafers

Pánkové

Berkeyheiser

1986

Review of Scientific Instruments

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A new instrument has been developed to map the photovoltaic response of a semiconductor to very penetrating sub-band-gap radiation (for silicon, λ=1.3 μm). The minority carrier density being nearly uniform throughout the thickness of the crystal, the photovoltaic response is dominated by the carrier diffusion length and thus reflects the quality of the material. A computer-controlled scan of the semiconductor presents a map of the gross quality of the specimen. The actual probe is a small transparent electrode (water) illuminated by an optical fiber carrying 1.3-μm light from an LED.

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Mapping the quality of semiconductor wafers

Pánkové

Berkeyheiser

1986

Review of Scientific Instruments

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Performance of Germanium and Silicon Surface Barrier Diodes as Alpha-Particle Spectrometers

Mayer

1959

Journal of Applied Physics

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The characteristics of a germanium surface barrier diode operated at room temperature make it particularly useful as an alpha-particle spectrometer. The small size, stability, energy resolution, and relative insensitivity to {3 and 'Y radiation of the units suggest applications in medical and nuclear research. Studies were made on Au-Ge and Au-Si surface barriers with a barrier width (=:::1 Il) less than the range of the incident alpha particles. In the germanium units, the pulse-height response to alpha particles increased linearly with energy up to 7.5 Mev and then increased monotonically but more slowly as the energy rose to 12 Mev. In silicon the deviation from linearity occurred around 6 Mev. The observed linearity between pulse height and energy depends simply on the fact that the number of carriers excited is proportional to the particle energy and that the time for the carriers to be collected at the barrier is less than the circuit time constant. The general theory of the transient response of the diode was developed and the calculated response compared with the observed behavior. The observed values of the energy required to create a hole-electron pair, measured over the energy range of linear response of the junction, were '(Ge) = 2.96±0.1 ev and f(Si)=3.9±0.3 ev.

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Use of the Flying-Spot Scanner to Study Photosensitive Surfaces

Cited by 2 publications

References 4 publications

Mapping the quality of semiconductor wafers

Mapping the quality of semiconductor wafers

Performance of Germanium and Silicon Surface Barrier Diodes as Alpha-Particle Spectrometers

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