Use of Stokes and anti‐Stokes Raman scattering for new applications

Abstract

We show the interest in recording both Stokes and anti-Stokes Raman spectra in two peculiar applications. In one case, the comparison between these two parts of the spectrum, measured at one temperature only, allows to distinguish between first-and second-order phonon bands. In the second example, the difference between Stokes and anti-Stokes spectra provides separation between vibrational and emission lines. We describe the different stages needed in the measurements and data treatment.

Localized phonons in Raman spectra of nanoparticles and disordered media

“…There are some technical aspects, sometimes disregarded in the literature, which are important for the consistency of the modeling. First, Raman intensity depends on temperature and wavelength: where ω is wavenumber of the excitation laser, ω is Raman shift, and S(ω) is intrinsic molar scattering activity. The common practice is to correct the experimental spectra by the Boltzmann factor and ω 3 wavenumber dependence .…”

Sub-THz Raman response in BaTiO3 and link with structural phase transition

“…A first (and the most important) correction comes from the population factor which is known to influence largely the Raman intensity at low-wavenumber. Furthermore, since a CCD is used as detector [27,28] the Raman intensity needs to be corrected by dividing the spectrum by this factor ( ν i −Δν) 3 . The reduced intensity of the (XX) spectrum is reported in fig 4b for several temperatures.…”

CsPbI3 Nanotube Photodetectors with High Detectivity

“…Figure e,f give the Raman spectra of CsPbI 3 nanotube recorded on the substrate of Si. The peaks located at 87 and 128 cm −1 are ascribed to the CsPbI 3 , and the one at 520.7 cm −1 comes from the used Si substrate . Figure a,b are the time‐dependent XRD patterns and UV–vis absorption spectra of CsPbI 3 nanotubes up to 2 months exposure in air with an interval of one week.…”