Use of plasma-activated gases in synthesis of solid-state nitrides

Vajenine, Grigori V.

doi:10.1039/c000361a

Cited by 2 publications

(2 citation statements)

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“…[66] Cold plasma processes also allow the synthesis of nitrides at quite low temperatures. [67] Besides our fundamental works on F 2 [68] and the reaction of fluorides in anhydrous ammonia, [69] we have also reported on the diammine silver(I) fluoride ammonia (1/2) [Ag(NH 3 ) 2 ]F·2 NH 3 . [70] As ammoniates of Ag I and Cu I may be isotypic, [71] we were hoping to prepare an analogous and eventually also isotypic Cu I fluoride as an ammoniate in order to convert it into the binary CuF.…”

Section: Introductionmentioning

confidence: 99%

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On Copper(I) Fluorides, the Cuprophilic Interaction, the Preparation of Copper Nitride at Room Temperature, and the Formation Mechanism at Elevated Temperatures

Woidy

Karttunen

Widenmeyer

et al. 2015

Chemistry A European J

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Our attempts to synthesize the hitherto unknown binary copper(I) fluoride have led to first successes and a serendipitious result: By conproportionation of elemental copper and copper(II) fluoride in anhydrous liquid ammonia, two copper(I) fluorides were obtained as simple NH3 complexes. One of them presents an example of ligand-unsupported "cuprophilic" interactions in an infinite [Cu2 (NH3 )4 ](2+) chain with alternating Cu-Cu distances. We discovered that both copper(I) fluorides can easily be converted into Cu3 N at room temperature, just by applying a vacuum. Additionally, we investigated the formation mechanism of the classical synthesis route of Cu3 N that starts with CuF2 and flowing NH3 in the temperature range between ambient and 290 °C by means of thermal analysis and in situ neutron diffraction. The reaction proceeds at elevated temperatures through the formation of a blue and amorphous ammoniate Cu(NH3 )2 F2 , the reformation of CuF2 , and finally the redox reaction to form Cu3 N.

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Section: Introductionmentioning

confidence: 99%

“…60, 65 Recently, Nakamura and co‐workers reported on Cu 3 N nanoparticle formation at temperatures between 130 and 200 °C 66. Cold plasma processes also allow the synthesis of nitrides at quite low temperatures 67…”

Section: Introductionmentioning

confidence: 99%

On Copper(I) Fluorides, the Cuprophilic Interaction, the Preparation of Copper Nitride at Room Temperature, and the Formation Mechanism at Elevated Temperatures

Woidy

Karttunen

Widenmeyer

et al. 2015

Chemistry A European J

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Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy

Krockenberger

Karimoto

Yamamoto

et al. 2012

Journal of Applied Physics

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We have investigated the formation of titanium nitride (TiN) thin films on (001) MgO substrates by molecular beam epitaxy and radio frequency acitvated nitrogen plasma. Although cubic TiN is stabile over a wide temperature range, superconducting TiN films are exclusively obtained when the substrate temperature exceeds 710 °C. TiN films grown at 720 °C show a high residual resistivity ratio of approximately 11 and the superconducting transition temperature (Tc) is well above 5 K. Superconductivity has been confirmed also by magnetiztion measurements. In addition, we determined the upper critical magnetic field (μ0Hc2) as well as the corresponding coherence length (ξGL) by transport measurements under high magnetic fields. High-resolution transmission electron microscopy data revealed full in plane coherency to the substrate as well as a low defect density in the film, in agreement with a mean-free path length ℓ ≈ 106 nm, which is estimated from the residual resistivity value. The observations of reflection high energy electron diffraction intensity oscillations during the growth, distinct Laue fringes around the main Bragg peaks, and higher order diffraction spots in the reciprocal space map suggest the full controlability of the thickness of high quality superconducting TiN thin films.

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Use of plasma-activated gases in synthesis of solid-state nitrides

Abstract: Basic properties of the plasma state are summarized, with the emphasis on low-pressure, non-isothermal, and cold plasma. The advantages of plasma activation in the synthesis of solid-state materials, especially nitrides, are discussed.

Cited by 2 publications

References 46 publications

On Copper(I) Fluorides, the Cuprophilic Interaction, the Preparation of Copper Nitride at Room Temperature, and the Formation Mechanism at Elevated Temperatures

On Copper(I) Fluorides, the Cuprophilic Interaction, the Preparation of Copper Nitride at Room Temperature, and the Formation Mechanism at Elevated Temperatures

Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy

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