We propose a new method of volume hologram multiplexing/demultiplexing in noncentrosymmetric media. Volume holograms may be multiplexed by tuning the material parameters of the recording medium (such as refractive index or lattice parameters) while keeping the external parameters (wavelength and angles) fixed.For example, an external dc electric field alters the index of refraction through the electro-optic effect, effectively changing the recording and reconstruction wavelengths in the storage medium. Then the storage of holograms at different fields, hence different indices of refraction, is closely related to wavelength multiplexing. We demonstrate this concept in a preliminary experiment by electrically multiplexing two volume holograms in a strontium barium niobate crystal.Holographic data-storage systems typically use angular," 2 wavelength, 3 or phase-coded 4 ' 5 multiplexing. Of these, the first two techniques exploit the dependence of the Bragg condition on the angle and wavelength of the writing beams:where Kg = 2 7rT/Ag is the magnitude of the grating vector, kl = k2 = 2irn/A are the magnitudes of the reference and signal-beam wave vectors, respectively, Ag is the grating period, n is the index of refraction, and A is the vacuum wavelength. However, the index of refraction is an additional degree of freedom in the Bragg condition that can be controlled by an external electric field. 6 In this Letter we establish a relation between electric-field and wavelength multiplexing and present the results of a preliminary experiment that demonstrates the concept of field multiplexing. We first derive a simple relation that illustrates the formal equivalence between wavelength and electricfield multiplexing under special conditions. This treatment is restricted to the case of counterpropagating signal and reference beams, both normally incident upon the crystal. In this case, the Bragg condition [Eq. (1)] becomes Ag = A/2n, and the Bragg selectivity is maximal. Let us apply a field E to the crystal. Then, differentiating the Bragg condition at constant temperature T and mechanical stress a., we obtain a relation for the change AA required to maintain Bragg matching under field-induced changes An(E) and AAg(E):
A n AgBecause the index of refraction in the crystal depends on the electric field and the wavelength,dA Substituting Eq. (3) into Eq. (2), we obtain a general relationship for the change in wavelength equivalent to a field-induced change of the index of refraction and grating period:In a noncentrosymmetric crystal, the field induces an index change that is due to a combination of the electro-optic, elasto-optic, and piezoelectric effects 7 and may rotate the principal axes by a fielddependent angle. We consider a simple yet common case, in which the optical and dc fields are parallel to the field-induced principal axes, and these axes do not rotate. Then the change in index along a principal axis iswhere rik, plm, and dkm are the electro-optic, elastooptic, and piezoelectric tensors, respectively, and 1 ...