Use of ion mixing to improve mechanical properties on thin metallic films

Radjabov, T.D.; Kamardin, A.I.; Iskanderova, Z.A.; Parpiev, M.P.

doi:10.1016/0168-583x(87)90174-1

Nuclear Instruments and Methods in Physics Research Section B:

1987

DOI: 10.1016/0168-583x(87)90174-1

|View full text |Cite

Use of ion mixing to improve mechanical properties on thin metallic films

T.D. Radjabov¹,

A.I. Kamardin²,

Z.A. Iskanderova³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1988

1999

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 11 publications

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Ion Beam Mixing of Ag/Si Bilayer

Masoud

Arafah

1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

The Rutherford backscattering (RBS) technique has been used to study the ion‐induced mixing of Ag thin film deposited onto Si substrates. The mixing was initiated by a 400 keV 40Ar+ beam by varying the dose up to 3 × 1017 ions/cm2 at constant flux of 0.6 μA/cm2. To assist the evaluation of the results, all spectra were simulated. The RBS spectra indicate that mixing is initiated after a dose of 5 × 1015 ions/cm2 is reached. With progressively increasing Ar dose to reach 1.6 × 1017 ions/cm2, the signal was noted to exhibit reduction of intensity accompanied by an increase of width and followed by long tail distributions, indicating a larger intermixed region. At higher doses the RBS spectra indicate that the Ag top layer was completely destroyed. The mixing rate parameters (or efficiencies) of Ag and Si were determined. Further insight into the mixing mechanism was gained by determining the diffusivities of both Ag and Si. Comparison between theory and experiment reveals that Ag diffuses within Si according to the collective effects resulting from thermal spike and thermally activated radiation enhanced diffusion (RED) mechanisms.

show abstract

Ion Beam Mixing of Ag/Si Bilayer

Masoud

Arafah

1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

show abstract

MeV ion beam enhanced adhesion of Au films on alumina

Daudin¹,

Martin²

1988

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

MeV ion beam-enhanced adhesion of Au films on alumina substrates of various roughness

Daudin

Martin²

1989

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Use of ion mixing to improve mechanical properties on thin metallic films

Cited by 11 publications

References 23 publications

Ion Beam Mixing of Ag/Si Bilayer

Ion Beam Mixing of Ag/Si Bilayer

MeV ion beam enhanced adhesion of Au films on alumina

MeV ion beam-enhanced adhesion of Au films on alumina substrates of various roughness

Contact Info

Product

Resources

About