Use of infrared imagery in characterization of chemical vapor deposition reactors

Hyer, Paul

doi:10.1016/s1350-4495(96)00023-0

Cited by 6 publications

(2 citation statements)

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“…Y1 and X1 are the gas-phase massfractions and surface site fractions, respectively. A species flux balance at the reacting surface yields ii =Mi(aj _aj)j , i=1 Ng (14) d[Bi(s)](bffb). ,i:::1 N,…”

Section: Mathematical Descriptionmentioning

confidence: 99%

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Modeling commercial MOCVD reactors: role of complex chemistry models

Mazumder

Lowry

2000

SPIE Proceedings

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Over-heating of semitransparent fused silica (quartz) pieces within MetalOrganic Chemical Vapor Deposition (MOCVD) reactors may result in parasitic deposition on reactor walls, leading to loss of precursors. Although growth on the substrate (epitaxial growth) is diffusion-limited, parasitic deposition occurs at colder temperatures and is therefore, rate-limited. The modeling of low-temperature deposition requires complex chemical mechanisms, which account not only for the kinetics of decomposition, but also the kinetics of adsorption and desorption at the surfaces. In this article, the role of complex chemistry has been demonstrated for growth of Gallium-Arsenide in a commercial horizontal reactor (Crystal Specialties 425).Numerical computations were performed for a wide range of operating conditions. Comparison of numerical predictions with experimental data clearly indicates the need for the development and use of detailed chemistry in modeling parasitic deposition in commercial reactors.

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Section: Mathematical Descriptionmentioning

confidence: 99%

“…(14) and (15)] are solved in a coupled Newton iteration, with first-order back Euler and second-order Crank-Nicolson Schemes available for time integration for transient simulations.…”

Section: Mathematical Descriptionmentioning

confidence: 99%