Use of hexamethylcyclotrisilazane for preparation of transparent films of complex compositions

Файнер, Н. И.; Golubenko, A. N.; Rumyantsev, Yu. M.; Maximovskii, E. A.

doi:10.1134/s1087659609030067

Cited by 33 publications

(25 citation statements)

References 8 publications

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“…With the increase in the temperature of the synthesis the concentration of Si-C bonds increases, in spite of the fact that the chemical composition of films prepared from HMCTS is close to silicon nitride, from TMDS, to silicon carbide, from HMDS is between them. This coincides with the results of thermodynamic calculations for the system Si-C-N-H with the use of the starting gas mixtures (TMDS+He), (HMDS+He), and (CHMTS+He) [46,58].…”

Section: Determination Of Chemical Phase Compositions and Types Of supporting

confidence: 87%

“…The experimental installation and the procedure are described in [58]. As a support, monocrystalline silicon(100), gallium arsenide (100), and melted quartz were used.…”

Section: Methodsmentioning

confidence: 99%

“…The instruments and procedures used are described in [58]. The structure and phase composition of the films were investigated using a nondestructive technique RFA-SI (Siberian Synchrotron and Terahertz Radiation Center, Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences), high resolution transmission, and raster electron microscopy, atomic force microscopy [50,54].…”

Section: Methodsmentioning

confidence: 99%

“…It is noteworthy here that the molecular structure of the starting organosilicon compounds affects the chemical and phase composition, as well as the microstructure of the deposited films of silicon carbonitride. The main part of compounds used for preparation of silicon carbonitride belonged to the class of silazanes: hexamethyldisilazane [11,39,[42][43][44][45][46][47][48][49][50][51][52][53][54], hexamethylcyclotrisilazane [55][56][57][58][59], polysilazanes, etc.…”

mentioning

confidence: 99%

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From organosilicon precursors to multifunctional silicon carbonitride

Файнер

2012

Russ J Gen Chem

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Films of silicon carbonitride of variable composition are prepared by the method of plasmochemical decomposition of tetramethyldisilazane, hexamethyldisilazane, and hexamethylcyclotrisilazane in the mixture with helium in the temperature range of 373-973 K. The chemical composition of the low temperature films (373-673 K) is described by the formula SiC x N y O z :H, whereas that of high temperature films, by the formula SiC x N y . The films of silicon carbonitride are found to be a nanocomposite material containing an amorphous part and nanocrystals, whose structure is close to the phase α-Si 3 N 4 . Films of the composition SiC x N y O z :H are promising as low-k interlayer dielectrics in ultra-large scale integrated circuits of new generation, as well as protecting antireflective coatings and light-emitting diodes.Nowadays more severe requirements are imposed on the quality of construction materials used in many fields of science and technology. New materials are necessary stable to high temperatures, mechanical wear, abrasion, corrosion and oxidation [1]. That is why various methods are intensively developed for the synthesis of refractory superhard coatings (hardness > 20 GPa), which have long lifetime, enhanced hardness, and are relatively cheap [2]. For example, coatings are made of materials alternative to the expensive diamond coatings. Binary solid compounds like SiC, TiC, TiN can provide an enhanced wear stability, but hardly can possess a wide variety of functional properties.Recent research has shown that coatings on the basis of ternary compounds exceed in their functional properties the coatings based on binary compounds [3]. One of promising ternary materials is silicon carbonitride. It possesses new properties as compared with crystalline binary compounds Si 3 N 4 and SiC. Films of silicon carbonitride possess an exclusive combination of physicochemical properties like high thermal conductivity, thermal stability (up to 1500°C), resistance to oxidation, high hardness, chemical inertness, that makes them ideal wear-and corrosionstable materials for applications in aggressive media, for high-temperature industrial and strategic applications [4][5][6][7][8][9][10]. It is assumed that a high thermal, chemical, and mechanical stability is achieved due to the absence of boundaries between the grains and of the oxides as secondary phases in these coatings. Besides, such properties as low density and good thermal shock resistance, are very important in the future for aerospace, automobile, and other fields of industry. It is known that stainless steel possessing high corrosive stability is rusted when stored for a long time in the open air because of acid rains. To prevent this process, the steel must be coated, for example, with a transparent solid film, like the film of silicon carbonitride [11]. In general, films of silicon carbonitride can be used in various applications, not only as barrier isolating layers, films for protection of flat panel displays, but also for general industrial application.Ad...

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Section: Determination Of Chemical Phase Compositions and Types Of supporting

confidence: 87%

“…The experimental installation and the procedure are described in [58]. As a support, monocrystalline silicon(100), gallium arsenide (100), and melted quartz were used.…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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From organosilicon precursors to multifunctional silicon carbonitride

Файнер

2012

Russ J Gen Chem

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“…Residual air pressure in reactor was 6•10 -3 Torr. More detailed information on synthesis conditions is available in [9]. All deposition parameters, except for the temperature, were kept constant.…”

Section: Methodsmentioning

confidence: 99%

Scanning probe microscopy and nanoindentation studies of silicon carbonitride films obtained by PECVD from hexamethyldisilazane

Shayapov¹,

Khomyakov²,

Rumyantsev³

2014

LoM

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Silicon carbonitride films were deposited by PECVD from hexamethyldisilazane. To investigate their surface and to determine the parameters of roughness, scanning probe microscopy was applied. Mechanical properties of the films (hardness, Young's modulus and elastic recovery) were studied by nanoindentation method. It has been found out that hardness and Young's modulus increase along with the growth of deposition temperature. Elastic recovery is close to 100 % at low deposition temperature (lower than 250 °C) and decreases with the rise of synthesis temperature. The results are explained by an increase in concentration of covalent bonds and other changes in chemical and phase composition.

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Synthesis, Characterization, and Thermal Properties of Chlorine‐Containing 1,1,2,2‐Tetraaminodisilanes and Their Potential as Chemical Vapor Deposition Precursors for Silicon Nitride Films

Chu

Miao

et al. 2015

Eur J Inorg Chem

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Three chlorine‐containing aminodisilanes of the type Cl(RR′N)2Si–Si(NRR′)2Cl (with R = alkyl and R′ = H or R) as potential chemical vapor deposition (CVD) precursors for silicon nitride (SiNx) films have been synthesized and characterized by X‐ray diffraction; 1H, 13C, and 29Si NMR spectroscopy; and elemental analysis. They were obtained in high yields by the reactions of hexachlorodisilane (Si2Cl6) with excess liquid amines in diethyl ether through a general single‐step procedure. Their thermal properties including stability, volatility, transport behavior, and vapor pressure were evaluated by thermogravimetric analysis (TGA) to confirm that they are suitable for the CVD procedure. The deposition of SiNx films was accomplished with a hot‐wall CVD reactor system, which preliminarily verified the suitability of these compounds as CVD precursors.

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Use of hexamethylcyclotrisilazane for preparation of transparent films of complex compositions

Cited by 33 publications

References 8 publications

From organosilicon precursors to multifunctional silicon carbonitride

From organosilicon precursors to multifunctional silicon carbonitride

Scanning probe microscopy and nanoindentation studies of silicon carbonitride films obtained by PECVD from hexamethyldisilazane

Synthesis, Characterization, and Thermal Properties of Chlorine‐Containing 1,1,2,2‐Tetraaminodisilanes and Their Potential as Chemical Vapor Deposition Precursors for Silicon Nitride Films

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