2002
DOI: 10.1016/s0022-0248(02)01558-0
|View full text |Cite
|
Sign up to set email alerts
|

Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 photo-absorbers by selenization of metal precursors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

2
37
0

Year Published

2002
2002
2009
2009

Publication Types

Select...
7

Relationship

3
4

Authors

Journals

citations
Cited by 45 publications
(39 citation statements)
references
References 22 publications
2
37
0
Order By: Relevance
“…We note that deep-level emissions assignable to carbon contamination were not observed. The results are similar to the cases of CIGS thin films grown by selenization [17][18][19][20] and CIS epilayers grown by metalorganic vapor phase epitaxy [24] using DESe. The PL result may imply that the films are suitable for the photoabsorbing layer of CIAS-based solar cells.…”
supporting
confidence: 76%
See 1 more Smart Citation
“…We note that deep-level emissions assignable to carbon contamination were not observed. The results are similar to the cases of CIGS thin films grown by selenization [17][18][19][20] and CIS epilayers grown by metalorganic vapor phase epitaxy [24] using DESe. The PL result may imply that the films are suitable for the photoabsorbing layer of CIAS-based solar cells.…”
supporting
confidence: 76%
“…The authors have proposed the use of a less hazardous metalorganic selenide, diethylselenide [(C 2 H 5 ) 2 Se: DESe], for growing CIGS films by the selenization method [17][18][19][20]. Since DESe decomposes into atomic Se more easily than H 2 Se gas or Se vapor (the bond strength of Se−C 2 H 5 (243 kJ/mol) is weaker than that of H−Se (276 kJ/mol) or Se = Se (332 kJ/mol) [21,22] ), reaction rates capable for forming CIS and CGS can be expected.…”
mentioning
confidence: 99%
“…In a recent investigation, diethylselenide was proposed as a substitute for the toxic hydrogen selenide. 77 Chemical reaction enthalpy calculations for Se and hydride vapors predict a more efficient conversion by elemental vapors, 78 but reaction analysis indicates that the rate of selenium incorporation into the film is the same, 79 and qualitatively a higher degree of reaction control is reported for hydride reactions. 80 Annealing at high temperature in inert Ar atmosphere was identified to promote interdiffusion of In and Ga in segregated CIS and CGS phases, resulting in a homogeneous CIGS phase.…”
Section: Selenization Of Precursor Materialsmentioning
confidence: 99%
“…Therefore, oxidation-reduction was introduced to MOD in order to remove residual carbon from the Cu-In precursors. Recently, diethylselenide (DESe) was reported as a useful selenization source for the preparation of good crystallinity CIS thin films [2]. Therefore, the use of the selenization using DESe to prepare CIS by MOD method is expected to improve the crystallinity of thin films.…”
Section: Introductionmentioning
confidence: 99%