Use of carrier injection engineering to increase the light intensity of a polycrystalline silicon avalanche mode light-emitting device

Abstract

This paper demonstrates a polycrystalline silicon avalanche mode light-emitting device. The unique N+PN+PN+ cascade structure is designed to enhance light intensity via carrier injection engineering, in which the minority carriers are injected from the forward-biased junction to the light emission junction. Visible light can be observed at the reverse-biased PN junctions when the device operating voltage exceeds 20 V. In particular, the phonon-assisted indirect interband recombination of carriers with excess energy may be the main mechanism of photon emission. A specific junction model is proposed to explain that the light intensity peaks are generated primarily via carrier injection. Comparing the spectral measurements of a single polysilicon N+P junction device and the proposed cascade device shows that the strategy of improving the luminous intensity via carrier injection engineering is feasible and effective.

Asymmetrical Plasmon Distribution in Hybrid AuAg Hollow/Solid Coded Nanotubes

“…It is also revealed in Figure 1 B that hybrid AuAg nanotubes preserve the penta-twinned structure and are highly crystalline. As mentioned in the experimental procedure section, these 1D structures are synthesized by following the procedure reported in [ 38 ]. Very recently, Canepa et al [ 54 ] reported anisotropic galvanic replacement reactions in Ag nanowires, synthesizing similar hybrid nanotubes as the present study.…”

“…S. Yazdi et al [ 37 ] reported the controllable, reversible, and dynamic tuning of plasmon resonances in partially hollow AgAu nanorods via EELS, which showed the extent of the ability to control plasmonic properties in hollow nanostructures [ 37 ]. The idea of having repeated units, i.e., coded nanostructures, to have better properties is also applicable to other optical devices [ 38 ]. To further investigate this phenomenon by comparing the plasmonic properties of hollow and partially hollow nanostructures, the present study reports the observations of plasmon resonances in 1D hollow nanostructures of two different AuAg nanotubes.…”

Performance enhancement with thin p-AlInN electron-blocking layer in ultraviolet light-emitting diodes

“…7,8 Improving injection efficiency to increase light output of LED is the goal. 9 Extensive research has been carried out to overcome challenges faced by UV LEDs. [10][11][12][13][14][15] AlN and AlInN are the potential alloys that have been used by many research groups for the development of efficient optoelectronic devices.…”

High-Performance Lithium-Ion Battery and Supercapacitors Using Covalent Organic Frameworks (COFs)/Graphitic Carbon Nitride (g-C3N4)-Derived Hierarchical N-Doped Carbon

“…Lithium-ion batteries (LIBs) and supercapacitors (SCs) have gotten much attention worldwide. − SCs are electrical components that meet the required criteria of advanced energy storage systems. SCs have gained much interest because of their advantages of low cost, quick charge–discharge rate, high power density, and high specific energy. − SCs can be utilized as a power supply for various portable electronic devices, such as smartphones and notebooks, due to their small size and lightweight.…”