Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor to Configure Exclusive-OR Gate

Abstract

As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder and encrypted circuits. Here, we suggest that using the ambipolar property of carbon nanotubes and the threshold modulation ability of dual-gate field-effect transistors, an XOR gate can be constructed in only one transistor. For a traditional XOR gate, 4 to 6 transistors are needed, and this low-footprint topology could be employed in the future for hyperscaling and three-dimensional logic and memory transistor integration.

Tunable Electron Transport in Defect-Engineered PdSe2

“…16−19 Altogether, air-stable NMDCs in the reduced dimension may exhibit better device performance and tunability via defect engineering for future applications in logic circuits. 20 Recently, palladium diselenide (PdSe 2 ), a Group 10 NMDC, has been explored and recognized as a highly air-stable layered material with a unique puckered pentagonal morphology. 13 Usually, puckered configuration exhibits novel anisotropic properties which is rarely found in the family of 2D materials.…”

“…In contrast to the conventional Group 6 TMDCs, NMDCs with group 10 elements possess largely occupied d -orbitals (more than half-filled) of the noble metals and highly hybridized p z orbitals of the chalcogen atoms which may lead to strong interlayer coupling as well as layer dependent band gap, as observed in one of the compounds from the NMDC family, PtS 2 (∼0.2 eV in bulk and ∼1.6 eV in the monolayer). − Additionally, it has been predicted that a coordinatively unsaturated noble metal, like Pd, will have a much higher O 2 adsorption energy barrier (∼1.2 eV) than Group 6 elements which might be the reason for high air-stability at the edges. , Recent experimental study has confirmed that the device performance of PtSe 2 FET remains nearly unchanged after 5 months of air-exposure . Apart from the air-stability and layer dependence, the electronic properties of these materials vary extensively due to surface vacancy defects introduced during the growth and exfoliation process or can be further tuned by doping. − Altogether, air-stable NMDCs in the reduced dimension may exhibit better device performance and tunability via defect engineering for future applications in logic circuits …”

Tunable electron transport in defect-engineered PdSe$_\mathrm{2}$

“…Apart from the air-stability and layer dependence, the electronic properties of these materials vary extensively due to surface vacancy defects introduced during the growth and exfoliation process or can be further tuned by doping [16][17][18][19]. Altogether, air-stable NMDCs in the reduced dimension may exhibit better device performance and tunability via defect engineering for future applications in logic circuits [20].…”