Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-Based Light-Emitting Diodes

Kuo, H. Y.; Lee, W. C.; Wang, S. J.; Uang, Kai−Ming; Chen, T. M.; Chou, Jui-Chiang; Yao, Cheng-You; Hsu, H. K.; Kuan, Hsu‐Chiang

doi:10.7567/ssdm.2008.e-10-4

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials 2008

DOI: 10.7567/ssdm.2008.e-10-4

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Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-Based Light-Emitting Diodes

H. Y. Kuo¹,

W. C. Lee²,

S. J. Wang³

et al.

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Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-Based Light-Emitting Diodes

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