Use of Advanced Analytical Techniques for VLSI Failure Analysis

Banerjee, Indrajit; Tracy, Bryan; Davies, Paul; McDonald, Bob

doi:10.1109/irps.1990.363501

Cited by 3 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In some cases, an undesirable result of the use of certain lower-melting BPSG compositions has been devitrification, with formation of crystalline precipitates in the amorphous BPSG films. Precipitate formation has been observed (20,21) in a n u m b e r of wafer fabrication facilities. Amorphous microstructural defects have been reported in LPCVD BPSG films (20) and have been attributed to phase separation of regions which are richer in phosphorus than the BPSG glass matrix.…”

Section: Devitrification In Bpsgmentioning

confidence: 99%

“…Amorphous microstructural defects have been reported in LPCVD BPSG films (20) and have been attributed to phase separation of regions which are richer in phosphorus than the BPSG glass matrix. BPO4 crystaUites have been shown to be present on a BPSG surface and have been attributed to high concentrations of boron and phosphorus (21).…”

Section: Devitrification In Bpsgmentioning

confidence: 99%

See 1 more Smart Citation

Devitrification in Borophosphosilicate Glass Films Used in VLSI

Schnable

Fisher

Shaw

1990

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Section: Devitrification In Bpsgmentioning

confidence: 99%

Section: Devitrification In Bpsgmentioning

confidence: 99%

Devitrification in Borophosphosilicate Glass Films Used in VLSI

Schnable

Fisher

Shaw

1990

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Secondary ion mass spectrometry (SIMS) is a very precise analytical technique for determining the elemental composition of a sample − and is especially well known for its excellent detection limits of trace elements − and thus is widely used for failure analysis. − However, in most cases, tested structures are relatively simple and thus a proper analysis and interpretation is often straightforward. In the case of several microns thick and complicated structures with layers as thin as tens of nanometers SIMS failure analysis faces a major problem: mixing effect may prevent proper evaluation of interfaces because signals will have long decay length, and thus it will not be possible to assess whether some intermixing or diffusion occurred.…”

Section: Introductionmentioning

confidence: 99%

A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer Devices

Michałowski

Kaszub

Knyps

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Further development and optimization of modern optoelectronic devices requires fast and reliable procedures that may evaluate the quality of interfaces. For thick multilayer devices, mixing effect may significantly prevent proper interpretation of secondary ion mass spectrometry depth profiles especially if a region of interest is located far from the sample surface. In this work, we present how to overcome this problem with a so-called a-crater-within-a-crater approach. In this notion, a high energetic primary ion beam is used to rapidly remove most of the material forming a large crater. Then, the energy is significantly reduced and a new smaller crater is formed at the bottom of the previous one. Close to the region of interest, the impact energy is decreased to 150 eV and thus an interface can be analyzed with minimal mixing effect and thus its quality can be adequately assessed. Usefulness of this approach is tested on an epitaxial structure of a triple-junction solar cell and reliable information about the structure imperfection has been obtained: p and n dopants in the tunnel junction overlapped, deteriorating the operation of the device.

show abstract

Low‐cost physical analysis techniques for the failure analysis of semiconductor components

Glacet

Dall'oro

1992

Quality & Reliability Eng

View full text Add to dashboard Cite

Failure analysis of semiconductor components should not only be considered as an ever increasing costly activity which is economically difficult to support, to develop, and to justify, because of the continuous technology evolution. Analytical techniques such as integrated circuit pin‐to‐pin electrical test, plastic package opening with the acid dropper, hot spot detection with liquid crystals, EBIC, voltage contrast in static and voltage coding modes, can be developed and applied in failure analysis laboratories with low‐cost equipment. Although they are not intended to replace some well‐known expensive and sophisticated analytical tools, they can provide efficient results.

show abstract

Use of Advanced Analytical Techniques for VLSI Failure Analysis

Cited by 3 publications

References 0 publications

Devitrification in Borophosphosilicate Glass Films Used in VLSI

Devitrification in Borophosphosilicate Glass Films Used in VLSI

A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer Devices

Low‐cost physical analysis techniques for the failure analysis of semiconductor components

Contact Info

Product

Resources

About