Use of a TiN barrier to improve GaAs FET ohmic contact reliability

Remba, R.D.; Suni, I.; Nicolet, M.‐A.

doi:10.1109/edl.1985.26182

Cited by 14 publications

(4 citation statements)

References 7 publications

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“…TiN was investigated by Remba et al (2), who showed that it could serve as an effective diffusion barrier between the ohmic contact and overlay layers. Reactively sputtered TiWN was investigated by Wolters and Nellison (6).…”

Section: Introductionmentioning

confidence: 99%

“…The use of diffusion barriers in FET processing has been discussed previously by many researchers (1)(2)(3)(4)(5)(6)(7)(8). TiN was investigated by Remba et al (2), who showed that it could serve as an effective diffusion barrier between the ohmic contact and overlay layers. Reactively sputtered TiWN was investigated by Wolters and Nellison (6).…”

Section: Introductionmentioning

confidence: 99%

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Use of Diffusion Barriers for Improved Reliability GaAs FET's

Thompson

Remba

1987

J. Electrochem. Soc.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Use of Diffusion Barriers for Improved Reliability GaAs FET's

Thompson

Remba

1987

J. Electrochem. Soc.

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“…21,22 In addition, TiW and Mo films can also act as a good barrier layer for GaAs Ohmic contacts. 21,22 In addition, TiW and Mo films can also act as a good barrier layer for GaAs Ohmic contacts.…”

Section: Introductionmentioning

confidence: 99%

Study of diffusion barriers for Au metal on liquid phase oxidized GaAs

Sze

Huang

Chou

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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TiW, TiN, Pd, and Mo as the diffusion barriers ͑DBs͒ in Au/DB/GaAs native oxide multilayer structures are investigated. The GaAs native oxides are prepared by liquid phase oxidation, and the results indicate that TiW and Mo films can effectively block Au diffusion at temperatures of up to 550°C for 30 min. However, TiN and Pd films can effectively block Au diffusion only at 450°C for 30 min. The failure of TiN and Pd appears related to the embedded oxygen in the barrier layers which cause the interdiffusion between Au and the barrier films. In comparison, TiW and Mo show better blocking properties that prevent Au from diffusing into oxide films. They also act as a diffusion barrier even at temperatures above 550°C.

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“…Since a metal overlayer is often used for bonding and interconnection purpose, a diffusion barrier is needed to prevent intermixing and reaction between the semiconductor and metal overlayer. Several authors have reported that TiN has good diffusion barrier properties in GaAs ohmic contacts technology (1)(2)(3)(4).…”

mentioning

confidence: 99%

Reactively Sputtered W‐N Films as Diffusion Barriers in GaAs Metallizations

Kolawa

Tandon

et al. 1987

J. Electrochem. Soc.

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The stability of reactively sputtered tungsten‐nitrogen alloy thin films is investigated for application as diffusion barriers between normalGaAs and Au, Ag, or Al metal layers. The composition of W‐N barriers is varied over a wide range, including pure W. We find that W‐N layers prevent the interdiffusion and reaction between Au or Ag metal overlayers and normalGaAs up to at least 550° and 600°C heat‐treatments, respectively, for 30 min annealing in forming gas. Metallurgical interactions in the normalGaAs/M and normalGaAs/W‐N/Mfalse(M=normalAu,normalAg,normalAlfalse) systems have been studied by backscattering spectrometry, sheet resistance measurements, SEM, and EDAX analysis.

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Use of a TiN barrier to improve GaAs FET ohmic contact reliability

Cited by 14 publications

References 7 publications

Use of Diffusion Barriers for Improved Reliability GaAs FET's

Use of Diffusion Barriers for Improved Reliability GaAs FET's

Study of diffusion barriers for Au metal on liquid phase oxidized GaAs

Reactively Sputtered W‐N Films as Diffusion Barriers in GaAs Metallizations

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