“…The application described in this work was the characterization of the structure of ultra-large-scale integrated circuits which incorporated titanium silicide components and aluminium connections on a silicon substrate. Continuing with the theme of semiconductor components, Fougeres et al 199 developed a new micro-¯uorescence instrument comprising an X-ray generator coupled to an X-ray focusing capillary with a high resolution CdZnTe detector (225 eV resolution FWHM at 5.9 keV). This instrument was used to control the concentration of Zn and its ¯uctuation in high pressure Bridgman-grown CdZnTe crystals.…”