Use of a 3C–SiC Buffer Layer and Vicinal Substrates for the Heteroepitaxial Growth of MgO Films on Si(001)

Abstract

High‐quality epitaxial MgO has been deposited from methylmagnesiumtert‐butoxide on Si(001) by high vacuum CVD. The use of 3C–SiC buffer layers, which are grown using 1,3‐disilabutane and vicinal Si(001) substrates that are 4° and 6° off towards the [110] direction, are found very effective in establishing the epitaxial growth of the MgO films (see Figure).

Stability Study of a Magnesium β-Diketonate As Precursor for Chemical Vapor Deposition of MgO

“…To date, MgO thin films have been deposited by several techniques, including sputtering, laser ablation, − homogeneous precipitation, sol−gel, , spray pyrolysis, − and chemical vapor deposition (atomic layer deposition (ALD), − plasma-enhanced chemical vapor deposition (PECVD), pulsed organometallic molecular beam epitaxy (POMBE), metal organic chemical vapor deposition (MOCVD) − ). Among these techniques, MOCVD provides many advantages, including conformal coverage even on complex surface profiles, simplicity in experimental apparatuses and process control, good compositional tailoring, and suitability for a wide range of deposited materials …”

“…A key role in determining the success of the MOCVD thin film growth is played by the availability of highly volatile and thermally stable precursors, ensuring a constant and reproducible mass supply from the vapor phase to the substrate and a clean decomposition into the target material. Various organometallic and coordination compounds have been used as magnesium oxide CVD sources, including alkyls, − alkoxides, , carboxylates, carbammates, , cyclopentadienyls, , and β-diketonates. − Among them, β-diketonates are very promising because of their stability, easy preparation, and clean decomposition pathway . Nevertheless, when dealing with alkaline earth metals with a coordination number ≥ 6, the recurrent inability of β-diketonate ligands to saturate the metal coordination sphere may be compensated by oligomerization processes or by solvent coordination that, in turn, produce an unwanted increased melting point and a depressed volatility.…”

“…1 This material has often been used for the production of protective coatings of dielectrics 2,3 and as buffer layers for superconducting or perovskite ferroelectric thin films. [4][5][6][7][8][9] To date, MgO thin films have been deposited by several techniques, including sputtering, 10 laser ablation, [11][12][13] homogeneous precipitation, 14 sol-gel, 15,16 spray pyrolysis, [17][18][19] and chemical vapor deposition (atomic layer deposition (ALD), [20][21][22][23] plasma-enhanced chemical vapor deposition (PECVD), 24 pulsed organometallic molecular beam epitaxy (POMBE), 25 metal organic chemical vapor deposition (MOCVD) [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] ). Among these techniques, MOCVD provides many advantages, including conformal coverage even on complex surface profiles, simplicity in experimental apparatuses and process control, good compositional tailoring, and suitability for a wide range of deposited materials.…”

“…41 A key role in determining the success of the MOCVD thin film growth is played by the availability of highly volatile and thermally stable precursors, ensuring a constant and reproducible mass supply from the vapor phase to the substrate and a clean decomposition into the target material. Various organometallic and coordination compounds have been used as magnesium oxide CVD sources, including alkyls, [26][27][28][29] alkoxides, 30,31 carboxylates, 32 carbammates, 33,34 cyclopentadienyls, 35,36 and β-diketonates. [37][38][39][40][41] Among them, β-diketonates are very promising because of their stability, easy preparation, and clean decomposition pathway.…”

Synthesis of Mg and Zn diolates and their use in metal oxide deposition

“…In addition, ZnEt 2 shows undesired pre-reactions and hence decomposition by the deposition of particulates, upstream from the heating element may occur during the precursor delivery. 32,39,43 For MgO lm formation, bis(cyclopentadienyl) magnesium, 25,44 alkylmagnesium alkoxides, 45,46 magnesium carboxylates, 47,48 magnesium b-ketoiminates, 49 magnesium bdiketonates 26 and their diamine adducts 12,50,51 are usually used as CVD precursors of which the latter ones are promising CVD candidates, due to their high volatility, good stability in the condensed and gas phase, and their straightforward synthetic procedure. 12,50,51 In contrast, as spin-coating precursors mainly magnesium acetate tetrahydrate or zinc acetate dihydrate were used for the formation of the respective metal oxide layers.…”