Usage of Axial and Rotating Magnetic Field to Process Ge0.98Si0.02 Crystal by the Traveling Heater Method

Jaber, T. J.; Saghir, M.Z.

doi:10.1115/fedsm2007-37390

Cited by 1 publication

(3 citation statements)

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“…The speed at which the heater travels upward determines the composition and the growth rate of the crystal. Experimentally, the appropriate growth rate'was found to be about 4 mm/day [30]. In the last phase, the heater is shut off and the molten region at the top of the formed single crystal is allowed to cool and solidify ending the crystal process.…”

Section: Crystal Growth Techniquementioning

confidence: 99%

“…This effect was also noted to have a substantial influence on the concentration variations along the growth interface. Jaber et al [30] have also conducted a 3D simulation of the effect of axial and rotational magnetic field on the SiGe crystal growth using the THM. The results indicated that axial magnet suppress convective flow leading to more stable and uniform crystal growth, while rotational magnetic field was found to change the behavior of silicon distribution at the growth interface from a convex shape to nearly flat at a limiting magnetic field intensity of 15 mT and 7 rpm.…”

Section: Literature Reviewmentioning

confidence: 99%

“…Once the geometry and the mesh are done, they are exported to the commercial computational code FIDAP where the mathematical model was solved. The initial mesh sensitivity analysis was performed by Jaber et al [35] for the same model on the solvent entity. The Nusselt number was used as a mean to measure the mesh sensitivity.…”

Section: Mesh Sensitivitymentioning

confidence: 99%

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Three-dimensional numerical simulation of crystal growth using TSM under g-jitter conditions

Asmae¹

2021

Preprint

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The goal of this thesis is to study the effect of residual gravity on crystal growth of Silicon Germanium GE0.98 Si0.02 using the Traveling Heater Method (THM). This method has proven to be one of the most efficient techniques to grow high-quality crystals because it can be grown at relatively low temperatures compared to existing crystal growth techniques. Yet, because of natural convection due to earth's gravity, imperfection in terms of silicon distribution along the growth interface occurs. By growing crystals in a space environment, residual gravity represented by a static microgravity component and a sinusoidal component would decrease the intensity of the convective flow, which in return would lead to a more uniform silicon distribution. However, g-jitter fluctuation has proven to have a noticeable effect on the silicon distribution. Therefore, as an initial step to understand the behavior of crystal growth in space, each component of the g-jitter force will be studied thoroughly. The momentum, mass and energy equations, representing the 3D TSM model, were solved using finite element means. The preliminary results indicate that the complexity and the intensity of the silicon distribution along the growth interface are proportional to the convective flow, that partially controls the migration of silicon. Therefore, the quality of the crystal growth is assessed based on the behavior of the flow along the solvent regime. Based on the imposed static gravity in the range of 10-6 go to 10-3 go, the flow was determined to be in a diffusion mode with a velocity ranging from 10-6 cm/sec to 10-3 cm/sec. As a matter of fact, the flow intensity was noted to be positively proportional to the dominant component of both the static and the amplitude of the imposed g-jitter and negatively proportional to the frequency of the sinusoidal g-jitter. Consequently, realistic space growth conditions have proven to be an effective way of producing a homogeneous crystal since a flawless crystal silicon distribution is obtained at the growth interface.

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Section: Crystal Growth Techniquementioning

confidence: 99%

Section: Literature Reviewmentioning

confidence: 99%