2010
DOI: 10.1039/c0ce00139b
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Urchin-like ZnO nanorod arrays for gas sensing applications

Abstract: ZnO nanorod assemblies were grown by plasma-enhanced chemical vapor deposition on polycrystalline Al(2)O(3) at 200-300 degrees C, resulting in urchin-like 1-D ZnO NR arrays with a strong c-axis orientation. Their outstanding gas sensing responses and very low detection limits highlight the potential of the present systems in the production of high efficiency chemical sensors for a variety of applications

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Cited by 98 publications
(131 citation statements)
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“…Nano structured metal oxide semiconductors such as ZnO, SnO 2 , TiO 2 and WO 3 [21][22][23][24][25][26][27][28] are widely used as gas sensors, as their resistivity changes in the presence of reactive gases [29,30]. Nanostructures are attractive as sensing elements owing to their large surface area to volume ratio allowing higher adsorption of gas molecules.…”
Section: Discussionmentioning
confidence: 99%
“…Nano structured metal oxide semiconductors such as ZnO, SnO 2 , TiO 2 and WO 3 [21][22][23][24][25][26][27][28] are widely used as gas sensors, as their resistivity changes in the presence of reactive gases [29,30]. Nanostructures are attractive as sensing elements owing to their large surface area to volume ratio allowing higher adsorption of gas molecules.…”
Section: Discussionmentioning
confidence: 99%
“…This might be due to the catalytic action of nanostructure LaFeO 3 thin films, which will enhance the reaction between chemisorbed oxygen ions and NO 2 . 39 The sensitivity is highly dependent on film thickness, operating temperature, chemical composition, and crystallite size. Figure 9c and d represents the response and recovery time of LaFeO 3 nanostructure thin films of network and nanocube structures toward 1−5 ppm of NO 2 at RT with an experimental error of ±0.01%.…”
Section: Acs Applied Materials and Interfacesmentioning
confidence: 99%
“…Metallic Zn [36][37][38][39][40][41][42][43] or diethylzinc (Et 2 Zn) [44][45][46][47], both with O 2 as carrier (reactive) gas, have been used as precursors for the formation of ZnO via CVD, although other simple precursors such as zinc nitrate (Zn(NO 3 ) 2 ) [48] and organometallic complexes (e.g., Zn(II) ketoiminate) [49,50], have also been reported. ZnO films or NPs have been typically achieved at deposition temperatures between 350 and 450˝C, whereas NS of this material have been reported at deposition temperatures exceeding 450˝C, either with or without the use of gold (catalytic) seeds to encourage NS formation.…”
Section: Zinc Oxidementioning
confidence: 99%