Interfaces,
grain boundaries, and dislocations are known to have
significant impact on the transport properties of materials. Even
so, it is still not clear how the structure of interfaces influences
the mobility and concentration of carriers that are responsible for
transport. Using low angle twist grain boundaries in MgO as a model
system, we examine the structural and kinetic properties of vacancies.
These boundaries are characterized by a network of screw dislocations.
Vacancies of both types, Mg and O, are strongly attracted to the dislocation
network, residing preferentially at the misfit dislocation intersections
(MDIs). However, the vacancies can lower their energy by splitting
into two parts, which then repel each other along the dislocation
line between two MDIs, further lowering their energy. This dissociated
structure has important consequences for transport, as the free energy
of the dissociated vacancies decreases with decreasing twist angle,
leading to an increase in the net migration barrier for diffusion
as revealed by molecular dynamics simulations. Similar behavior is
observed in BaO and NaCl, highlighting the generality of the behavior.
Finally, we analyze the structure of the dissociated vacancies as
a pair of jogs on the dislocation and construct a model containing
electrostatic and elastic contributions that qualitatively describe
the energetics of the dissociated vacancy. Our results represent the
first validation of a mechanism for vacancy dissociation on screw
dislocations in ionic materials first discussed by Thomson and Balluffi
in 1962.