Update on III-V antimonide-based superlattice FPA development and material characterization

InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures

“…The 20-arcsec SL zero-order peak FWHM result is compatible with the one of the best results for InAs/Ga(In)Sb SLs reported in the literature. 16,17 Following the structural characterization, PL measurement is performed using a FTIR with the double-modulation technique. The T2SL samples are excited with a 780-nm laser modulated at 50 kHz to discriminate the PL signal from the background blackbody radiation in the MWIR and the LWIR bands.…”

Development of high-performance novel low-dimensional structure antimonide infrared FPAs: challenges and solutions

“…如美国 Raytheon vision system 公司和法国 Sofradir 公 司分别开发了 256×256 和 320×256 HgCdTe APD 面阵 器件 [58,59] 激光雷达系统. 但目前这类器件高昂的价 格使得这类 HgCdTe 红外器件主要限于高端军用装 备. InAs/GaSb 超晶格材料为代表的 6.1 Å 族锑化物材 料是否成为替代 HgCdTe 材料的新一代红外光电倍 增管材料 [60] ?…”

Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors

“…The InAs/GaSb type-II strained layer superlattice (T2-SL) is widely regarded as a viable alternative to the dominant HgCdTe technology for infrared (IR) detection [1]. Over the past decade, significant progress in both scientific and technological aspects has been made [2]. Despite the relatively short carrier lifetime in InAs/GaSb T2-SLs, researchers managed to take advantage of the great versatility in energy band alignment.…”

“…Despite the relatively short carrier lifetime in InAs/GaSb T2-SLs, researchers managed to take advantage of the great versatility in energy band alignment. The detector performances are steadily approaching the well-investigated HgCdTe and InSb technologies [1][2]. Driven by the increasing demand to shrink the size, weight, and power consumption (SWaP) of IR imaging systems, the development of high operating temperature (HOT) IR detectors and imagers is of great interest.…”