Unwanted turn-on of SiC JFET bi-directional switches under influence of parasitic parameters

Wang, Lina; Zhang, Xiangcai; Deng, Jie; Yang, Junyi; Oladele, Olanrewaju Kabir; Zhao, Yue

doi:10.1109/iecon.2017.8216719

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…Although Si-based [15], GaN-based [13], and SiCbased [16] monolithic 4-quadrant switches are present in the literature but are difficult to find commercially. Therefore, 4-quadrant switches are realisable using discrete 2-quadrant switches like Si IGBTs [17], SiC MOSFETs [14], [18] or SiC JFETs [19] and power diodes, if necessary. Given SiC MOSFETs have major advantages over other devices, they are preferred for a 4-quadrant switch.…”

Section: Introductionmentioning

confidence: 99%

Switching Investigation of SiC MOSFET Based 4-Quadrant Switch

Anurag

Nath

2023

IEEE Access

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Section: Introductionmentioning

confidence: 99%

Switching Investigation of SiC MOSFET Based 4-Quadrant Switch

Anurag

Nath

2023

IEEE Access

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“…The BDS consists of two anti-serial unidirectional switches, each of which is in a cascode-light configuration composed of a high voltage normally on SiC N-JFET and a low-voltage Si P-MOSFET [16]. The configuration utilizes a p-channel MOSFET instead of the n-channel MOSFET that is used in the conventional cascode solution.…”

Section: The Developed Configuration Of the Sic Jfet-based Bdsmentioning

confidence: 99%

“…However, normally-on JFETs pose safety issues in many circuits during startup and/or abnormal gate driver conditions. One solution to this problem is to configure a normally on JFET into a normally off structure by connecting it with a low-voltage Si MOSFET in a cascode-light configuration [16,18].…”

Section: The Developed Configuration Of the Sic Jfet-based Bdsmentioning

confidence: 99%

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

Wang

Yang

et al. 2018

Electronics

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Silicon Carbide (SiC)-based Bi-Directional Switches (BDS) have great potential in the construction of several power electronic circuits including multi-level converters, solid-state breakers, matrix converters, HERIC (high efficient and reliable inverter concept) photovoltaic grid-connected inverters and so on. In this paper, two issues with the application of SiC-based BDSs, namely, unwanted turn-on and parasitic oscillation, are deeply investigated. To eliminate unwanted turn-on, it is proposed to add a capacitor (C X ) paralleled at the signal input port of the driver IC (integrated circuit) and the capacitance range of C X is also analytically derived to guide the selection of C X . To mitigate parasitic oscillation, a combinational method, which combines a snubber capacitor (C J ) paralleled with the JFET (Junction Field Effect Transistor) and a ferrite ring connected in series with the power line, is proposed. It is verified that the use of C J mainly improves the turn-off transient and the use of a ferrite ring damps the current oscillation during the turn-on transient significantly. The effects of the proposed methods have been demonstrated by theoretical analysis and verified by experimental results.

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