Unveiling the role of carbon defects in the exceptional narrowing of m-ZrO2 wide-bandgap for enhanced photoelectrochemical water splitting

Biby, Ahmed H.; Tolba, Sarah A.; Allam, Nageh K.

doi:10.1016/j.ijhydene.2021.03.248

Cited by 6 publications

(2 citation statements)

References 100 publications

(58 reference statements)

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“…This phenomenon can be explained by overviewing Te properties, which is known to oxidize easily in semiconductor materials, and can help reduce oxygen vacancies. Thus, Te doping is utilized to decrease the number of oxygen vacancies in semiconductors, which leads to controlling charge transport or enhancing the performance of electronic devices [10]. Forming heterojunction structures also resulted in the decrease of the VO, without the need for doping.…”

Section: Resultsmentioning

confidence: 99%

P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

Han,

Shin,

Sung

et al. 2024

Symp Digest of Tech Papers

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The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin‐film transistors (TFTs), we propose heterojunction structure of p‐type Tellurium (Te) and n‐type Aluminum‐Doped Indium‐Zinc‐Tin‐Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single / double deposition of the heterojunction Te layer.

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Section: Resultsmentioning

confidence: 99%

P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

Han,

Shin,

Sung

et al. 2024

Symp Digest of Tech Papers

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“…Therefore, using an inert substrate such as carbon-based current collectors should reveal more accurate results, impacting the true reaction mechanism, and the true capacitance values. Since density functional theory (DFT) has proven to be a good tool for prediction of the properties of energy materials, − it was used to understand the reason behind the EDL capacitance through calculation of the quantum capacitance of the electrode material. − Quantum capacitance reflects the electronic response of the electrode material upon applying voltage. Therefore, the higher the quantum capacitance, the higher the EDL behavior of the electrode material …”

Section: Introductionmentioning

confidence: 99%

Toward the Proper Selection of Carbon Electrode Materials for Energy Storage Applications: Experimental and Theoretical Insights

2021

Self Cite

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Identifying the proper carbon material is one of the key requirements in developing high-performance supercapacitor electrodes. Carbon nanotubes (CNTs), graphene nanoplatelets (GNPs), and graphite (Gr) are commonly used carbon allotropes for supercapacitor applications. The performance of those materials depends on the electrolyte used and the operating potential window. However, those parameters have rarely been investigated and explained. Herein, we present a roadmap for the proper selection of carbon materials in supercapacitor applications via the investigation of the behavior of CNTs, GNPs, and Gr in different electrolytes using both electrochemical and computational tools. The charge storage mechanism was found to be electrolyte-dependent. In terms of the operating potential window, the best performance was obtained upon the use of a Na2SO4 electrolyte, which enabled a potential window of −1 to 0.9, while in terms of capacitance, the positive electrodes in a H2SO4 electrolyte exhibited the highest capacitance. H2SO4 enabled keto–enol tautomerism in the positive potential window and can enlarge the potential window to 1 V. Quantum capacitance calculations helped to identify the reasons behind the obtained different performances in the negative and positive potential windows. For example, upon the identification of the proper electrolyte and potential window, it was possible to obtain a capacitance as high as 453.60 F/g at 5 mV/s in a potential window of 1 V for CNTs, which are much higher than those reported in the literature. Moreover, the guidelines were successfully used to develop a symmetric device that delivers a specific energy of 23.3 Wh/kg and a specific power of 475 W/kg with a stability of 97.8% after 5000 cycles over a potential window of 1.9 V, which are much higher than those reported for CNTs-based symmetric devices.

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Enhanced photoelectrochemical water splitting via engineered surface defects of BiPO4 nanorod photoanodes

El-Shazly

Hamza

Allam

2021

International Journal of Hydrogen Energy

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Unveiling the role of carbon defects in the exceptional narrowing of m-ZrO2 wide-bandgap for enhanced photoelectrochemical water splitting

Cited by 6 publications

References 100 publications

P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

Toward the Proper Selection of Carbon Electrode Materials for Energy Storage Applications: Experimental and Theoretical Insights

Enhanced photoelectrochemical water splitting via engineered surface defects of BiPO4 nanorod photoanodes

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