Unveiling the contribution of piezoelectric and ferroelectric effect to inorganic halide perovskites photodetectors

Xue, You; Yang, Tao; Wang, Enhui; Wang, Hongyang; Zhu, Laipan; Cao, Sheng; Hou, Xinmei; Chou, Kuo-Chih

doi:10.1016/j.nanoen.2024.109491

Cited by 6 publications

(1 citation statement)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among different optically active materials, lead halide perovskites (ABX 3 ) are one of the major stakeholders in the optoelectronics community. − Highly tunable absorption and emission over the whole visible to NIR range, a high absorption coefficient (∼10 5 cm –1 ), and exceptionally large carrier diffusion path lengths (∼5–100 μm) and lifetimes (∼10–15 μs) make the system a potential candidate for energy-harvesting devices also. − However, the material suffers from stability-related issues as exposure to moisture leads to the decomposition of the material. , Hence, suitable strategies for the encapsulation of the material are essential before applying the material to any optoelectronic operation.…”

Section: Introductionmentioning

confidence: 99%

Tribo-piezoelectric Hybrid Nanogenerators Based on ZnO Nanorods and CsPbBr₃ Nanoparticle/PVDF-HFP Films for Self-Powered Photodetectors

Baro,

Mayu,

Ghorai

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Tribo-piezoelectric Hybrid Nanogenerators Based on ZnO Nanorods and CsPbBr₃ Nanoparticle/PVDF-HFP Films for Self-Powered Photodetectors

Baro,

Mayu,

Ghorai

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Exploring the Optoelectronic and Photovoltaic Characteristics of Lead‐Free Cs₂TiBr₆ Double Perovskite Solar Cells: A DFT and SCAPS‐1D Investigations

Hossain,

Islam,

Sakib

et al. 2024

Adv Elect Materials

View full text Add to dashboard Cite

In recent times, the remarkable advancements achieved in the field of perovskite solar cells (PSCs) have sparked significant research efforts aimed at enhancing their overall performance because of their exceptional optoelectronic properties. Due to the toxicity of lead (Pb), the emergence of Ti‐based (Cs2TiBr6) double‐halide PSCs is regarded as a good alternative to Pb‐based PSCs. Here, density functional theory (DFT) calculations are performed to examine the prospect of Cs2TiBr6 perovskite as a layer of absorber for photovoltaic cells (SCs). These computations looked at the material's structural, optical, and electrical characteristics. The density of states (DOS) results demonstrate strong conductivity, principally provided by the 4p states of Br, whilst Ti‐3d and Cs‐5p orbital electrons offer insignificant contributions. The electronic band structure discloses a direct band gap of 1.534 eV. The covalent connections that exist between Ti and Br atoms and the robust electronic charge density around the Ti atom both demonstrate a significant buildup of electronic charge along the 100 planes. The dielectric function and the coefficient of absorption have significance irrespective of lower energies because it is extremely valuable for solar energy applications. The UV absorption peaks of Cs2TiBr6 have a maximum of ≈15.51 eV and are magnified with photon energy up to 2.46 eV, indicating that it may have potential for solar applications. This work also investigated a good combination of the hole transport layer (HTL) and electron transport layer (ETL) with the Cs2TiBr6 absorber layer. AZnO, Nb2O5, LBSO, and Zn2SnO4 are executed as the ETLs, and MoO3, CuAlO2, MEH‐PPV, ZnTe, CNTS, GaAs, MoS2, PTAA, Cu2Te, Zn3P2 are considered as the HTLs to identify the best HTL/Cs2TiBr6/ETL combinations using the SCAPS‐1D numerical simulation. Among all configurations, ITO/LBSO/Cs2TiBr6/CNTS/Au is examined as the best‐optimized structure of Ti‐based PSC, with JSC of 26.63 mA cm−2, a VOC of 1.123 V, FF of 82.94%, and a power conversion efficiency of 24.82%. To validate the findings, PV parameters like the effect of generation rate, recombination rate, J−V, and Q‐E characteristics are evaluated. The effect of series and shunt resistance and structure working temperature are explored to observe the effect of these on PSC devices. The accomplished outcomes suggest that Cs2TiBr6 can be viewed as an optimistic material for PSCs for its higher stability and environment‐friendly characteristics.

show abstract

Investigation of Structural, Electronic, and Optical Characteristics of a Novel Perovskite Halide, Mg₃AsCl₃, for Electronic Applications

Chahar,

Mishra,

Sharma

2024

Physica Status Solidi (b)

View full text Add to dashboard Cite

In the present research article, the structural, electronic, and optical characteristics of a novel perovskite halide, Mg3AsCl3, for a broad range of applications are thoroughly investigated. The characteristics of Mg3AsCl3 perovskite are investigated via the use of the generalized gradient approximation (GGA), Perdew–Burke–Ernzerhof and Heyd–Scuseria–Ernzerhof (HSE06) functionals, which are employed in conjunction with the linear combination of atomic orbital calculator. The structural, electrical, and optical characteristics of the material are investigated using density‐functional theory. In this study of the electronic characteristics, it is found that Mg3AsCl3 exhibits an indirect energy bandgap of 2.49 eV with GGA and 3.54 eV with HSE06. The complex band structure exhibits characteristics that indicate the presence of evanescent waves, which are characterized by a layer separation of 5 Å. The report in this research presents reflectivity values of 0.06328 and 0.02971 with GGA and HSE06 functionals, respectively. The reported values of the extinction coefficient are 3.36487 × 10−5 and 2.07389 × 10−5 calculated with GGA and HSE06 functionals. The value reported for the real dielectric function Re[ε] is 2.79625 with GGA and 2.00658 with HSE06. Overall, in these findings, an overview is given that Mg3AsCl3 holds potential as a candidate for use in a wide range of electronic device applications.

show abstract

Unveiling the contribution of piezoelectric and ferroelectric effect to inorganic halide perovskites photodetectors

Cited by 6 publications

References 47 publications

Tribo-piezoelectric Hybrid Nanogenerators Based on ZnO Nanorods and CsPbBr₃ Nanoparticle/PVDF-HFP Films for Self-Powered Photodetectors

Tribo-piezoelectric Hybrid Nanogenerators Based on ZnO Nanorods and CsPbBr₃ Nanoparticle/PVDF-HFP Films for Self-Powered Photodetectors

Exploring the Optoelectronic and Photovoltaic Characteristics of Lead‐Free Cs₂TiBr₆ Double Perovskite Solar Cells: A DFT and SCAPS‐1D Investigations

Investigation of Structural, Electronic, and Optical Characteristics of a Novel Perovskite Halide, Mg₃AsCl₃, for Electronic Applications

Contact Info

Product

Resources

About

Unveiling the contribution of piezoelectric and ferroelectric effect to inorganic halide perovskites photodetectors

Cited by 6 publications

References 47 publications

Tribo-piezoelectric Hybrid Nanogenerators Based on ZnO Nanorods and CsPbBr3 Nanoparticle/PVDF-HFP Films for Self-Powered Photodetectors

Tribo-piezoelectric Hybrid Nanogenerators Based on ZnO Nanorods and CsPbBr3 Nanoparticle/PVDF-HFP Films for Self-Powered Photodetectors

Exploring the Optoelectronic and Photovoltaic Characteristics of Lead‐Free Cs2TiBr6 Double Perovskite Solar Cells: A DFT and SCAPS‐1D Investigations

Investigation of Structural, Electronic, and Optical Characteristics of a Novel Perovskite Halide, Mg3AsCl3, for Electronic Applications

Contact Info

Product

Resources

About

Tribo-piezoelectric Hybrid Nanogenerators Based on ZnO Nanorods and CsPbBr₃ Nanoparticle/PVDF-HFP Films for Self-Powered Photodetectors

Tribo-piezoelectric Hybrid Nanogenerators Based on ZnO Nanorods and CsPbBr₃ Nanoparticle/PVDF-HFP Films for Self-Powered Photodetectors

Exploring the Optoelectronic and Photovoltaic Characteristics of Lead‐Free Cs₂TiBr₆ Double Perovskite Solar Cells: A DFT and SCAPS‐1D Investigations

Investigation of Structural, Electronic, and Optical Characteristics of a Novel Perovskite Halide, Mg₃AsCl₃, for Electronic Applications