Unusual Electrical Transport Driven by the Competition between Antiferromagnetism and Ferromagnetism in Antiperovskite Mn3Zn1−xCoxN

Abstract

The magnetic, electrical transport and thermal expansion properties of Mn3Zn1−xCoxN (x = 0.2, 0.4, 0.5, 0.7, 0.9) have been systematically investigated. Co-doping in Mn3ZnN complicates the magnetic interactions, leading to a competition between antiferromagnetism and ferromagnetism. Abrupt resistivity jump phenomenon and negative thermal expansion behavior, both associated with the complex magnetic transition, are revealed in all studied cases. Furthermore, semiconductor-like transport behavior is found in sample x = 0.7, distinct from the metallic behavior in other samples. Below 50 K, resistivity minimum is observed in samples x = 0.4, 0.7, and 0.9, mainly caused by e-e scattering mechanism. We finally discussed the strong correlation among unusual electrical transport, negative thermal expansion and magnetic transition in Mn3Zn1−xCoxN, which allows us to conclude that the observed unusual electrical transport properties are attributed to the shift of the Fermi energy surface entailed by the abrupt lattice contraction.

Ternary nitride GaFe3N: Study of the structural and glassy magnetic properties at low temperatures

“…The predictive values of α and M 0 by fitting Equation (), increase initially and then tend to saturate when the applied field is 5 kOe, which shows that the test magnetic field is enough. This magnetization‐response‐time relaxation behavior has been observed in conventional glassy systems 29,30,35 …”

“…This magnetizationresponse-time relaxation behavior has been observed in conventional glassy systems. 29,30,35 The macroscopic magnetic properties of materials are closely related to their microscopic electronic activities. The change of chemical bonds leads to the hybridization of electrons between 4s-Ga, 4p-Ga, 2p-N, and 3d-Fe (located in face-center sites) orbitals.…”

A large magnetocaloric effect and thermoelectric properties of anti-perovskite SnMn3N material: a DFT study and monte carlo simulation

“…These compounds exhibit G-type anti-ferromagnetism, where neighboring magnetic moments align antiparallel. The crystal structure plays a crucial role in determining magnetic behavior, with experiments and simulations demonstrating the interplay between crystal structure and magnetism [44,46,47].…”

Mn3Ag(1-)Cu()N antiperovskite thin films with ultra-low temperature coefficient of resistance

“…Since their introduction in 1930 by Moral [1], antiperovskite structures have come a long way in their development. In particular, the antiperovskite structure with the general formula Mn3AN (where A is a transition metal) has gained renewed interest because of its unique properties such as magnetoresistance [2][3][4], giant magnetocaloric effects [3,4], zero and negative thermal expansion [3,[5][6][7][8], magnetostriction [9,10], superconductivity [4,11], supercapacitance [12], spin glass behaviour [13], and extremely low temperature coefficient of resistance (TCR) [14][15][16]. These properties make Mn3AN a potential material system for application in electrical actuators and sensors [17], solid state electrolytes in batteries [18][19][20], high precision measurement [11,12,21] and hybrid electronic devices [22].…”