Ni–Cr thin films of various compositions are deposited by multitarget reactive sputtering with nitrogen gas introduction, and the electrical properties of the films are investigated. An increase in the lattice parameter is observed when nitrogen contents are less than 25%, and nitrides are formed in the deposited films when nitrogen contents reach much higher values. The resistivity of the deposited films at room temperature increases with increasing nitrogen content, and their temperature coefficient of resistance (TCR) changes from approximately +100 to -100 ppm/°C through nearly equal to zero. Gage factors of the films are about 2 and are independent of the nitrogen content.