We have directly grown single-walled carbon nanotubes on epitaxial BaTiO 3 thin films, fabricating prototype carbon nanotube-ferroelectric devices. We demonstrate polarization switching using the nanotube as a local electric field source and compare the results to switching with an atomic force microscopy tip. The observed variation of domain growth rates in the two cases agrees with the changes in electric field intensity at the ferroelectric surface. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2985815͔The small size and exceptional electrical properties of carbon nanotubes ͑CNTs͒ have made them the subject of intense research and promising candidates for device applications such as quantum wires, and nanoelectromechanical oscillators. 1,2 In fundamental and applied studies, conventional field-effect architecture has been widely used to modulate CNT charge carrier density and hence control their electronic properties. In such devices, SiO 2 remains the most common dielectric material.An alternative is a device combining CNT with a ferroelectric material ͑Fig. 1͒, allowing local control of domain structures in the ferroelectric film and potentially ferroelectric gating of the CNT. Ferroelectrics are characterized by a reversible nonvolatile electric polarization, with significant interest for memory applications. Due to their small size, CNT can act as a probe and local electric field sources, 3,4 allowing nanoscale studies of ferroelectric domain nucleation and growth. In parallel, the ferroelectric polarization can potentially be used to modulate charge carrier density of the CNT. Such ferroelectric field-effect doping has been demonstrated in superconducting and metallic oxides, 5,6 allowing local, reversible gating with a polarization of ϳ20-70 C / cm 2 , depending on the ferroelectric material used, and the interface quality.Here, we report on the fabrication and characterization of a prototype CNT-BaTiO 3 device with CNT grown directly on the epitaxial ferroelectric thin film. We demonstrate local control of the ferroelectric polarization using voltage pulses applied between the CNT and the conducting substrate, and compare the domain growth observed with that of atomic force microscopy ͑AFM͒-written nanoscale domains. We find that domain growth rates agree with the electric field modeled for each case. Finally, we observe a gate-voltagedependent "memory effect" during transport measurements, although this appears to be due to interaction with surface states rather than a ferroelectric field effect.To fabricate the devices, CNTs were synthesized on the ferroelectric surface by chemical vapor deposition ͑CVD͒ over Fe and Mo salts on Al 2 O 3 nanoparticles, 7 with Ti-Pt electrodes defined by subsequent photolithographic patterning and evaporation. The ferroelectrics were all tetragonal ͑001͒-oriented, epitaxial thin films grown by rf-magnetron sputtering on conducting Nb: SrTiO 3 substrates, allowing the polarization to be switched along the c-axis perpendicular to the plane of the film. Different...