Unravelling the theoretical window to fabricate high performance inorganic perovskite solar cells

Abstract

Perovskite solar cells (PSCs) have celebrated a decade of intense investigation as a promising photovoltaic technology, measuring a power conversion efficiency of >25.2% with the use of lead based light...

Investigating the theoretical performance ofCs2TiBr6‐based perovskite solar cell with La‐dopedBaSnO3andCuSbS2as the charge transport layers

“…Because of its formation, the propagation of holes to the back contact will be hindered, causing the reduction of the PCE of the PSC. 5…”

“…4 These ions are extremely volatile and hygroscopic, thus making the device unstable and more intolerant of heat and moisture. 5 Ti-based A 2 +1 Ti +4 X 6 À1 double perovskites are leadfree and nontoxic materials that not only can substitute the lead in perovskite but also possess novel optoelectronic applications besides solar cells. 6 According to the density functional theory (DFT) calculations, these HPs have advantageous electronic and optical properties, such as appropriate bandgaps and tuneable defect properties.…”

Harnessing the potential of lead-free Sn–Ge based perovskite solar cells by unlocking the recombination channels

“…The VBO is a parameter to measure the energy level between the perovskite layer and HTL. We have demonstrated that reducing the VBO will help to improve the Voc in PSCs 39 . Thus, we have employed PTAA (-5.25 eV) as an HTL, it has a deep energy level compared to the perovskite layer (-5.4 eV) in contrast with Spiro-OMeTAD (-5.11 eV) as shown (Fig.…”

“…The energy level aligning between the interlayers as well as the stability of selective layers in the PSCs architect is a key to minimize the energy loss. 37,39 Using CeOx as an ETL can be an effective path to improve the performance in lead-free PSCs. Firstly (Fig.…”

“…35,36 The macroscopic simulation such as the Drift Diffusion model can be an effective approach to overcome this challenge without sacrificing laboratory consumables, manpower, and less time to cut down the cost. [37][38][39] Herein, to figure out the performance limit of using CsSn0.5 Ge0.5I3 as an absorber layer, we computed the n-i-p structure i.e., FTO/PCBM/CsSn0.5Ge0.5I3/Spiro-OMeTAD/Au by employing the Solar Capacitor Simulator (SCAPS), the first simulation model was compared to the experimental studies reported. We optimized the thickness of the absorber layer by following the performance improvement.…”