Unravelling the bulk and interfacial charge transfer effects of molybdenum doping in BiVO4 photoanodes

Multiple Effects Induced by Mo6+ Doping in BiVO4 Photoanodes

“…The high magnification images relative to the 4, 6, and 8L films with different Mo dopant contents (0, 0.5, and 3 at%) are compared in Figure . A worm‐like structure typical of BV films [ 30 ] is detected for the pure and 0.5 at% Mo 6+ ‐doped films up to 6L, which progressively turns into a spherical shape morphology with increasing dopant amount and/or number of coating layers.…”

“…This work aims at identifying the mechanisms responsible for the PEC performance enhancement in water oxidation induced by Mo 6+ doping of BiVO 4 photoanodes, through an in‐depth investigation of the role of Mo 6+ doping in modifying both the bulk properties of the material and the chemistry of surface states. [ 30 ] Photoelectrodes of pure and Mo 6+ ‐doped BiVO 4 were prepared by means of a novel multistep spin‐coating deposition approach, leading to multilayer flat films with high optical transparency, which is an important requirement for their implementation in the dual absorber PEC tandem devices. A systematic investigation was performed, employing a series of complementary structural and PEC investigation strategies, including transient absorption measurements providing information on the dynamics of photogenerated charge carriers in the semiconductor, to correlate the effects of photoactive film thickness and doping to the PEC performance in water oxidation.…”

Enhanced Charge Carrier Separation in WO3/BiVO4 Photoanodes Achieved via Light Absorption in the BiVO4 Layer

“…Regardless of the BiVO 4 thickness , A 1 and A 2 account of ∼30 and 70% of the hole decay, respectively. The fast decay lifetime, which is associated with the recombination of trapped holes in BiVO 4 with photopromoted free electrons, is independent of the BiVO 4 layer thickness (τ 1 , ∼20 ps), because all electrodes are excited at the same pump wavelength (i.e., with the same energy excess with respect to the BiVO 4 CB). , On the other hand, τ 2 , which is ascribed to the recombination of trapped holes with trapped electrons, increases from ∼1 to 6.5 ns with increasing BiVO 4 layer thickness as more holes get trapped in bulk sites. ,, …”

The synergistic effect of CuBi2O4 and Co-Pi: improving the PEC activity of BiVO4-based composite materials

“…1,2 Examples include TiO 2 , WO 3 , Fe 2 O 3 , BaTiO 3 , BiVO 4 and g-C 3 N 4 . [3][4][5][6][7][8][9][10][11] BiVO 4 has a suitable band gap position between 2.4 and 2.5 eV and superior properties. In addition, BiVO 4 is chemically stable in aqueous solutions, abundant in nature and non-toxic.…”