ReS2, a layered transition metal dichalcogenide (TMD)
with reduced crystal symmetry exhibiting unique anisotropic and layer-independent
properties, holds great potential for optoelectronic and photonic
applications. Despite a flurry of research activities in the third-order
nonlinear optical response of TMDs, tuning those properties in a completely
reversible manner in real time is a challenge and remains largely
unexplored. Here, we experimentally demonstrate band edge carrier-induced
sign reversal of the ultrafast third-order nonlinear optical response
in few-layer (4–8) ReS2 nanoflakes. In particular,
saturable absorption observed before hot carrier thermalization (<0.3
ps) is tuned to reverse saturable absorption (RSA) after the carrier
thermalized (>0.6 ps) at the band edge and defects using a single-color
pump–probe intensity scan (I-scan) technique. RSA in our experiment
is due to the two-step two single-photon absorption of the long-lived
(∼1000s of ps from our ultrafast transient absorption) carriers
at the band edges and defects. Motivated by the results, a liquid
cell-based high-performance few-layer ReS2 optical limiter
is fabricated with a remarkable 0.1 GW/cm
2
onset threshold and 0.64 limiting differential transmittance better
than the other optical-limiting materials. These results offer a direction
to manipulate the nonlinear optical response of materials which otherwise
requires a large electric field, high intensity, or efficient charge
transfer between donor and acceptor pairs.