Unraveling the impact of the Pd nanoparticle@BiVO₄/S-CN heterostructure on the photo-physical & opto-electronic properties for enhanced catalytic activity in water splitting and one-pot three-step tandem reaction

Abstract

Influence of Pd NPs in the BiVO4/S-CN photocatalyst is demonstrated for the efficient water splitting and imine synthesis via tandem reaction.

Unlocking Molecular Secrets in a Monomer-Assembly-Promoted Zn-Metalated Catalytic Porous Organic Polymer for Light-Responsive CO2 Insertion

“…47 To estimate the band edge locations of Zn@MA-POP, a Mott−Schottky analysis was performed (Figure 4d), which showed a positive slope of 1/C 2 vs applied potential, characteristic of an n-type semiconductor. 48 The flat band potential of Zn@MA-POP calculated from the x intercept is −1.05 V. 49 For n-type semiconductors, the conduction band edge potential is defined as a drop in the flat band potential by 0.10 V, and hence the calculated CB/LUMO potential is −0.95 V. Further, the VB/HOMO position was found to be 1.55 V using the equation E VB − E CB = E g . 50 The HOMO and LUMO distributions from a DFT analysis of the Zn@MA-POP unit (Figure 4e) along with the band alignment show that the HOMO is mainly localized on the TPH moiety, whereas the LUMO is delocalized across the Zn-core unit, which basically acts as an electron acceptor.…”

Graphitic Carbon Nitride Modified with Zr-Thiamine Complex for Efficient Photocatalytic CO2 Insertion to Epoxide: Comparison with Traditional Thermal Catalysis

“…A reduction in the flat band potential by −0.10 V is considered as the conduction band edge potential for n-type semiconductors. 64 The calculated CB potentials from Mott−Schottky analysis using flat band potentials for g-CN, Zr-Thia(50)/g-CN, Zr-Thia(75)/g-CN, and Zr-Thia(100)/g-CN are calculated to be −0.88 V, −0.89 V, −1.0 V, and −0.92 V, respectively. The bandgap obtained from UV−visible spectroscopy, VBXPS derived valence band potential, and conduction band potential evaluated from M-S analysis gives the plausible band edge structure against the standard potential of Ag/AgCl.…”

“…The flat band potentials for g-CN, Zr-Thia(50)/g-CN, Zr-Thia(75)/g-CN, and Zr-Thia(100)/g-CN calculated from x -intercept are −0.98 V, −0.99 V, −1.10 V, and −1.02 V, respectively. A reduction in the flat band potential by −0.10 V is considered as the conduction band edge potential for n-type semiconductors . The calculated CB potentials from Mott–Schottky analysis using flat band potentials for g-CN, Zr-Thia(50)/g-CN, Zr-Thia(75)/g-CN, and Zr-Thia(100)/g-CN are calculated to be −0.88 V, −0.89 V, −1.0 V, and −0.92 V, respectively.…”

Selective Production of Secondary Amine by the Photocatalytic Cascade Reaction Between Nitrobenzene and Benzyl Alcohol over Nanostructured Bi2MoO6 and Pd Nanoparticles Decorated with Bi2MoO6

“…Several catalysts have been reported for the simultaneous photocatalytic oxidation of alcohols by photogenerated holes and reduction of nitrobenzene to aniline by photogenerated electrons. [30][31][32][33][34][35] TiO 2 , C 3 N 4 , BiVO 4 , and CdS based composite catalysts have been employed for this purpose. [30][31][32][33][34][35] Most of these catalysts were fabricated by a multi-step synthesis protocol.…”

“…[30][31][32][33][34][35] TiO 2 , C 3 N 4 , BiVO 4 , and CdS based composite catalysts have been employed for this purpose. [30][31][32][33][34][35] Most of these catalysts were fabricated by a multi-step synthesis protocol. The direct one-pot synthesis of secondary amines by the reaction of nitroarenes and alcohols is somewhat tricky, and therefore only a handful of reports are available.…”