2007
DOI: 10.1103/physrevb.75.205124
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Unoccupied electronic structure ofY1xCaxTiO3investigated by inverse photoemission s

Abstract: We have studied the unoccupied electronic structure of the band insulator CaTiO 3 , the Mott insulator YTiO 3 , and Y 0.61 Ca 0.39 TiO 3 with a metal-insulator transition ͑MIT͒ around 150 K by means of Ti 3p-3d resonant inverse photoemission spectroscopy ͑RIPES͒. The Ti 3d partial density of states of CaTiO 3 deduced from the on-and off-resonance RIPES spectra is in good agreement with results of a band-structure calculation, while that of YTiO 3 is explained based on a calculation with the dynamical mean-fiel… Show more

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Cited by 12 publications
(18 citation statements)
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“…During the measurements, the sample temperature was maintained at 280 K under a vacuum of 3 × 10 −11  Torr. IPE measurements were carried out at HiSOR3435. The incident electron kinetic energy was set to 50 eV and an energy resolution was 0.9 eV.…”
Section: Methodsmentioning
confidence: 99%
“…During the measurements, the sample temperature was maintained at 280 K under a vacuum of 3 × 10 −11  Torr. IPE measurements were carried out at HiSOR3435. The incident electron kinetic energy was set to 50 eV and an energy resolution was 0.9 eV.…”
Section: Methodsmentioning
confidence: 99%
“…The cross section of the Ti 3d states can be largely enhanced around the Ti 3p-3d edge via the Fano-resonance between the standard IPES process and the Coster-Kronig Auger process [2,21]. Additionally, it has been reported that the energies of on-and off-resonance IPES are about 46 eV and 39 eV, respectively [21]. In the off-resonant IPES spectrum (E k = 40 eV), we observe three features; a broad shoulder structure in 0-3 eV, a relatively intense peak at ∼ 3.8 eV, and a broad hump structure in 8-12 eV.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…We refer the reader to [45,[54][55][56] for details on the static properties of the system obtained with DFT + DMFT and other approaches. The free-electron spectrum of YTiO 3 was obtained by using a tight-binding model with the parameters given in [54].…”
Section: Mott Insulator Ytiomentioning
confidence: 99%