Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

Ishida, Hideyuki; Sugiyama, Daisuke; Yanagihara, Manabu; Uemoto, Yasuhiro; Matsuo, Hideaki; Ueda, T.; Tanaka, Tsuyoshi; Ueda, Daisuke

doi:10.1109/led.2008.2002753

Cited by 57 publications

(26 citation statements)

References 17 publications

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“…The proposed NSJ model can explain the fact, in which the fixed charges induced by the polarization are always balanced on the top and the bottom surface and thus the GaN-based layers act as an insulator at the complete depletion as summarized in Fig. 7 [8]. This can be compared with conventional Si-based super junction in which the donor and the acceptor concentrations need to be balanced for the complete depletion as shown in the same figure.…”

Section: Inalgan Quaternary Alloy Capping Layersmentioning

confidence: 97%

Polarization engineering in GaN power transistors

Ueda

Murata

Nakazawa

et al. 2010

phys. stat. sol. (b)

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This paper reviews novel design of epitaxial structure for GaN power transistors to reduce the on-state resistance and to increase the breakdown voltage. It takes advantages of the fixed charges at the interfaces caused by the material's inherent polarization, and thus it can be called as polarization engineering. Both AlGaN/GaN superlattices and polarizationmatched InAlGaN quaternary alloy effectively reduce the onstate resistance by using them as capping layers over AlGaN/ GaN combined with the recessed-gate structure. These capping layers successfully eliminate the electron depletion which is caused by the balancing of the fixed charges. The series resistance across the interface is fully reduced so that these capping layers enable low on-state resistance. Proposed natural super junction (NSJ) model well explains the fact that the breakdown voltages of AlGaN/GaN hetero-junction field effect transistors (HFETs) are increased by the extension of the gate and drain spacing. The model assumes that the heterojunction can act an insulator since the polarization induced charges are always balanced at the top and the bottom surfaces. Taking advantages of the model, the fabricated multi-channel AlGaN/GaN diode with dual-recessed structure exhibits high breakdown voltage of 9400 V with low on-state resistance of 52 mV cm 2 , which reaches the predicted performance limit of GaN. The presented polarization engineering is very promising for future improvement of the device performances.

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Section: Inalgan Quaternary Alloy Capping Layersmentioning

confidence: 97%

Polarization engineering in GaN power transistors

Ueda

Murata

Nakazawa

et al. 2010

phys. stat. sol. (b)

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“…A lot of research groups have been developing high power AlGaN/GaN FETs. However, only a few groups have been developing high power AlGaN/GaN SBDs [2] [3], as controlling the turn-on voltage and the reverse leakage current is not a trivial process. To increasing the current density of a SBD, vertical GaN SBDs fabricated on a bulk GaN wafer or a GaN epitaxial wafer have been suggested.…”

Section: Introductionmentioning

confidence: 99%

1kV AlGaN/GaN power SBDs with reduced on resistances

Park

Hwang

et al. 2011

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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Lateral Schottky Barrier Diodes (SBDs) with reduced on resistances (Ron) and breakdown voltages (Vbd) of higher than 1kV were fabricated on AlGaN/GaN/Si HEMT epi wafers. To improve the forward characteristics of the SBDs, an additional ohmic metal deposition process (2 nd ohmic process) has been inserted between the first ohmic metallization process and a Schottky metal deposition process. To minimize the increase of the reverse leakage current, various 2 nd ohmic metal patterns under the Schottky metal or a patterned Schottky electrode structure have been used to figure out optimum SBD designs. The proposed SBDs have achieved 25~75% lower on resistances at the operating voltages of 1.5~1.8V, and the leakage current increase due to the additional 2 nd ohmic structures reduced to 1~3 orders of magnitude increase from 5 to 6 order of magnitude increase.

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“…Prior research has proposed many techniques to improve the breakdown voltage [11][12][13][14][15]. However, the technologies that optimally improve the breakdown voltage in silicon devices cannot be transplanted directly to AlGaN/GaN HEMT structures, which have a special breakdown mechanism [16].…”

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confidence: 99%

Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs

Duan

Yang

2012

Sci. China Inf. Sci.

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This paper demonstrates that the depletion process for AlGaN/GaN high electron mobility transistors (HEMTs) is different than that for silicon power devices by analyzing active region depletion. Based on the special breakdown principle that occurs in AlGaN/GaN HEMTs, we propose a new reduced surface field AlGaN/GaN HEMT with a double low-density drain (LDD) and a positively charged region near the drain to optimize the surface electric field and increase the breakdown voltage. In this structure, two negative charge regions with different doses are introduced into the polarization AlGaN layer to form a double LDD and decrease the high electric field near the gate by depleting two-dimensional electron gas. A positively charged region is added to the electrode near the drain to decrease the high electric field peak at the drain edge. By applying ISE (integrated systems engineering) simulation software, we verify that the virtual gate effect occurs in the AlGaN/GaN HEMTs. The breakdown voltage is improved from 257 V in the conventional structure to 550 V in the proposed structure.

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Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

Cited by 57 publications

References 17 publications

Polarization engineering in GaN power transistors

Polarization engineering in GaN power transistors

1kV AlGaN/GaN power SBDs with reduced on resistances

Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs

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