Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

Fedina, L. I.; Гутаковский, А. К.; Латышев, А. В.; Aseev, A. L.

doi:10.1016/b978-0-12-810512-2.00016-0

Advances in Semiconductor Nanostructures 2017

DOI: 10.1016/b978-0-12-810512-2.00016-0

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Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

L. I. Fedina

А. К. Гутаковский

А. В. Латышев

et al.

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Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

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References 54 publications

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