2016
DOI: 10.1021/acsnano.6b04536
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Universal Near-Infrared and Mid-Infrared Optical Modulation for Ultrafast Pulse Generation Enabled by Colloidal Plasmonic Semiconductor Nanocrystals

Abstract: Field effect relies on the nonlinear current-voltage relation in semiconductors; analogously, materials that respond nonlinearly to an optical field can be utilized for optical modulation. For instance, nonlinear optical (NLO) materials bearing a saturable absorption (SA) feature an on-off switching behavior at the critical pumping power, thus enabling ultrafast laser pulse generation with high peak power. SA has been observed in diverse materials preferably in its nanoscale form, including both gaped semicond… Show more

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Cited by 102 publications
(84 citation statements)
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“…As for optical modulation, an indispensable technology for modern optical communication, controlling optical properties of a material by changing its refractive index is a widely adopted pathway . The refractive index of a material, however, is temperature dependent, which implies a way for optical modulation mediated by thermal control.…”
Section: Comparison Of Different 2d Materials‐based Similar Devicesmentioning
confidence: 99%
“…As for optical modulation, an indispensable technology for modern optical communication, controlling optical properties of a material by changing its refractive index is a widely adopted pathway . The refractive index of a material, however, is temperature dependent, which implies a way for optical modulation mediated by thermal control.…”
Section: Comparison Of Different 2d Materials‐based Similar Devicesmentioning
confidence: 99%
“…is also valid for conventional plasmonic materials. Very strong nonlinearity was observed for thin ITO films at the plasma frequency in the telecommunication spectral range as well as using semiconductor plasmonic nanocrystals …”
Section: Kerr‐type Nonlinearity and Ultrafast Nonlinear Plasmonicsmentioning
confidence: 99%
“…The defect absorption peak for CGO‐1 and CGO‐2 are different, which caused by the position of defect level is different with the Zn doping ratio increasing. In addition, the absorption intensity of Zn doped CGO NPs is much higher than pure CGO NPs in near infrared region, this can be ascribed to LSPR absorption which arise from collective oscillation of free carrier introduced by Zn doping . However, the LSPR absorption peaks are not observed obviously for CGO‐1 and CGO‐2.…”
Section: Resultsmentioning
confidence: 96%