Universal model for defect-related visible luminescence in ZnO nanorods

Barbagiovanni, Eric G.; Strano, Vincenzina; Franzò, G.; Reitano, R.; Dahiya, Abhishek Singh; Poulin‐Vittrant, Guylaine; Alquier, Daniel; Mirabella, S.

doi:10.1039/c6ra14453e

Cited by 18 publications

(28 citation statements)

References 48 publications

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“…Other structural defects can also create different energy levels inside the ZnO bandgap emitting light in several wavelengths, thus extending the PL emission range 13 , 48 , 49 . In an effort to quantify the PL spectra and identify the source of the broadband emission for the smallest pore sizes of pSi/ZnO, we deconvoluted the PL spectra into individual Gaussian contributions that are associated with specific defects; although theoretical works have shown that V O is a deep negative-U donor that has only one state in the band gap 50 there are plenty of experimental works reporting a variety of defects in ZnO that result in various defect states in the band gap and light emission from them 7 , 17 , 18 , 20 , 49 , 51 – 57 . Following the works of Barbagiovanni et al .…”

Section: Resultsmentioning

confidence: 99%

Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Dellis

Pliatsikas

Kalfagiannis

et al. 2018

Sci Rep

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The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices.

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Section: Resultsmentioning

confidence: 99%

Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Dellis

Pliatsikas

Kalfagiannis

et al. 2018

Sci Rep

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“…It is well known that ZnO material, irrespective bulk or nanostructures, are always unintentionally n-type doped. The cause of this unintentional n-type conductivity has been widely discussed in the literature, and has often been attributed to the presence of native point defects, such as oxygen vacancies and zinc interstitials 33 , 34 . The addition of ammonia during the hydrothermal growth process has shown to introduce additional point defects observed using optical characterization techniques, such as photoluminescence which will affect the electrical properties of the material 31 .…”

Section: Resultsmentioning

confidence: 99%

A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations

Boubenia

Dahiya

Poulin‐Vittrant

et al. 2017

Sci Rep

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Controlling properties of one-dimensional (1D) semiconducting nanostructures is essential for the advancement of electronic devices. In this work, we present a low-temperature hydrothermal growth process enabling density control of aligned high aspect ratio ZnO nanowires (NWs) on seedless Au surface. A two order of magnitude change in ZnO NW density is demonstrated via careful control of the ammonium hydroxide concentration (NH4OH) in the solution. Based on the experimental observations, we further, hypothesized the growth mechanism leading to the density controlled growth of ZnO NWs. Moreover, the effect of NH4OH on the electrical properties of ZnO NWs, such as doping and field-effect mobility, is thoroughly investigated by fabricating single nanowire field-effect transistors. The electrical study shows the increase of free charge density while decrease of mobility in ZnO NWs with the increase of NH4OH concentration in the growth solution. These findings show that NH4OH can be used for simultaneous tuning of the NW density and electrical properties of the ZnO NWs grown by hydrothermal approach. The present work will guide the engineers and researchers to produce low-temperature density controlled aligned 1D ZnO NWs over wide range of substrates, including plastics, with tunable electrical properties.

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“…To follow up the optical response of the obtained NWs with different NH4OH concentrations, photoluminescence (PL) measurements were performed, at room temperature (RT), by pumping at 1.5 mW the 325 nm line of a He−Cd laser chopped through an acousto-optic modulator at a frequency of 55 Hz. Further experimental details for PL measurements can be found in Ref [28].…”

Section: Resultsmentioning

confidence: 99%

“…were identified to be the cause of the defect level emission band in photoluminescence (PL) [27]. The visible PL band consists of three Gaussian components at 2.52, 2.23, and 2.03 eV, respectively labeled as blue IB, green IG, and orange IO peak emission [28]. However, even after years of investigations, the origin of these defect states is still a subject of debate.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

Dahiya¹,

Boubenia²,

Franzò³

et al. 2018

Preprint

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We report the influence of ammonium hydroxide (NH4OH), as growth additive, on zinc oxide nanomaterial through the optical response obtained by photoluminescence (PL). A lowtemperature hydrothermal process is employed for the growth of ZnO nanowires (NWs) on seedless Au surface. A more than two order of magnitude change in ZnO NW density is demonstrated via careful addition of NH4OH in the growth solution. Further, we show by systematic experimental study and PL characterization data that the addition of NH4OH can degrade the optical response of ZnO NWs produced. The increase of growth solution basicity with the addition of NH4OH may slowly degrade the optical response of NWs by slowly etching its surfaces, increasing the point defects in ZnO NWs. The present study demonstrates the importance of growth nutrients to obtain quality controlled density tunable ZnO NWs on seedless conducting substrates.

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Universal model for defect-related visible luminescence in ZnO nanorods

Cited by 18 publications

References 48 publications

Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations

Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

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