Universal behavior of electron 
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-factors in semiconductor nanostructures

Tadjine, Athmane; Niquet, Yann-Michel; Delerue, Christophe

doi:10.1103/physrevb.95.235437

Cited by 26 publications

(34 citation statements)

References 88 publications

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“…26 The size dependence of the g1 factor agrees well with the model calculations of the electron g factor in CdSe QDs. 4,27,28 These calculations imply that the g1 electron is exposed to the QD confinement potential only and, therefore, the electron wavefunction is centered in the QD. n-type photodoping in the presence of provides resident electrons in the QD core.…”

Section: Pump-probe Delay (Ns)mentioning

confidence: 96%

Origin of Two Larmor Frequencies in the Coherent Spin Dynamics of Colloidal CdSe Quantum Dots Revealed by Controlled Charging

Yakovlev

Liang

et al. 2019

J. Phys. Chem. Lett.

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Coherent spin dynamics in colloidal CdSe quantum dots (QDs) typically show two spin components with different Larmor frequencies, whose origin is an open question. We exploit the photocharging approach to identify their origin and find that surface states play a key role in the appearance of the spin signals. By controlling the photocharging with electron or hole acceptors, we show that the specific spin component can be enhanced by the choice of acceptor type. In core/shell CdSe/ZnS QDs, the spin signals are significantly weaker. Our results exclude the neutral exciton as the spin origin and suggest that both Larmor frequencies are related to the coherent spin precession of electrons in photocharged QDs. The lower frequency is due to the electron confined in the middle of the QD, and the higher frequency to the electron additionally localized in the vicinity of the surface.

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Section: Pump-probe Delay (Ns)mentioning

confidence: 96%

Origin of Two Larmor Frequencies in the Coherent Spin Dynamics of Colloidal CdSe Quantum Dots Revealed by Controlled Charging

Yakovlev

Liang

et al. 2019

J. Phys. Chem. Lett.

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“…Due to the increasing interest in spintronics [6] and in new schemes for quantum computation, including the detection of Majorana fermions [7], much attention has been given lately to the renormalization of the electron g factor in semiconductor nanostructures [8][9][10][11][12][13][14][15][16][17][18]. The mesoscopic confining potential in semiconductor nanostructures further renormalizes the bulk effective g factor (already renormalized from the bare value 2) and introduces extra anisotropies, transforming scalar g factors into tensors.…”

Section: Introductionmentioning

confidence: 99%

Mesoscopic g-factor renormalization for electrons in III-V interacting nanolayers

et al. 2018

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The physics of the renormalization of the effective electron g factor by the confining potential in semiconductor nanostructures is theoretically investigated. The effective g factor for electrons in structures with interacting nanolayers, or coupled quantum wells (QWs), is obtained with an analytical and yet accurate multiband envelopefunction solution, based on the linear 8 × 8 k • p Kane model for the bulk band structure. Both longitudinal and transverse applied magnetic fields are considered and the g-factor anisotropy (i.e., the difference between the two field configurations) is analyzed over the entire space spanned by the two structure parameters: the thickness of the active layers and the thickness of the tunneling barrier separating them. Two-dimensional anisotropy maps are constructed for symmetric and asymmetric InGaAs coupled QWs, with InP tunneling barriers, that reproduce exactly known single-layer or QW results, in different limits. The effects of the structure inversion asymmetry on the mesoscopic g-factor renormalization are also discussed, in particular the negative anisotropies for thin-layer structures. Such multilayer structures form an excellent testing ground for the theory, and the analytical solution presented, which is perfectly consistent over the whole space of parameters, leads to helpful expressions and can guide further research on the mechanisms of this mesoscopic renormalization.

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“…In each supercell, we introduce the disorder as a random on-site potential with a Gaussian distribution of a standard deviation σ = 10 meV. The disorder is therefore periodic, the wave vector k is still a good quantum number, the width of the Brillouin zone has just been reduced by a factor 5. σ being smaller than the width of the topological gaps, the disorder is not sufficiently strong to destroy the topological order [43,44]. For the sake of clarity, all figures in this section only show band structures in the energy region corresponding to the second (central) topological gap of the bulk.…”

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confidence: 99%

Robustness of states at the interface between topological insulators of opposite spin Chern number

Tadjine¹,

Delerue²

2017

EPL

Self Cite

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-We study the nature of the states at the interface between two time-reversal symmetric topological insulators characterized by opposite spin Chern numbers. We show using a multiorbital model that interface states are usually present in the common topological gaps of the materials. The transport in these states is robust against disorder scattering only when the two spin sectors are uncoupled (no Rashba spin-orbit coupling). Otherwise, the topological protection associated with the spin Chern number is lost and back-scattering is allowed, even in the absence of disorder, due to the coupling between states flowing in opposite directions and originating from the two sides of the interface. Conditions that minimize this effect can be found but the interface states remain sensitive to disorder. [5][6][7] effects, the quantization of the (spin) Hall conductance is protected by a non-trivial topology of the electronic band structure characterized by an integer topological invariant. The discovery of these effects has generated a huge amount of works on topological quantum phases, not only in electronic insulators [8] but also in ultracold atomic gases [9][10][11], polariton artificial lattices [12][13][14], mechanical lattices [15,16], photonic [17] and acoustic [18,19] systems.The QSH effect takes place in time-reversal invariant systems (hereafter referred to as topological insulators, TIs) in which the topological invariant is not just an integer but is Z 2 valued (ν = 1 instead of ν = 0 for a normal insulator) [8,20]. A prototypical case is the KaneMele model of graphene in which the spin-orbit coupling (SOC) opens a non-trivial gap at the Dirac point [5]. The edge of such a two-dimensional (2D) TI is characterized by helical states that cross the entire gap. Due to the spinmomentum locking, back-scattering in the edge channels is forbidden without breaking the time-reversal symmetry [20]. Remarkably, it was recently shown that the spin degree of freedom and the SOC can be emulated in other physical systems, allowing to realize the analogue of TIs with polaritons [21], ultracold atomic gases [22][23][24][25] and photonic materials [26].While the helical states at the edges of 2D TIs have been intensively studied, the physics of the interface between

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Universal behavior of electron g -factors in semiconductor nanostructures

Cited by 26 publications

References 88 publications

Origin of Two Larmor Frequencies in the Coherent Spin Dynamics of Colloidal CdSe Quantum Dots Revealed by Controlled Charging

Origin of Two Larmor Frequencies in the Coherent Spin Dynamics of Colloidal CdSe Quantum Dots Revealed by Controlled Charging

Mesoscopic g-factor renormalization for electrons in III-V interacting nanolayers

Robustness of states at the interface between topological insulators of opposite spin Chern number

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