2003
DOI: 10.1103/physrevb.67.094421
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Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids

Abstract: The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions that may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are general… Show more

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Cited by 94 publications
(104 citation statements)
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“…(10)) in term of these new variables. This will be done toward the end of this section, and we will find that j(x) and µ(x) satisfies the well known Valet-Fert diffusive equations 40 for continuous collinear systems and the equations of circuit theory for discrete non-collinear ones 24 . This connection is very interesting from the theoretical point of view as very different routes have been taken to obtain these equations (scattering and Random matrix theory on one side and Keldysh Green function formalism and quasiclassical approximation on the other side).…”
Section: B Random Matrix Theory (Rmt) For Magnetic Multilayersmentioning
confidence: 99%
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“…(10)) in term of these new variables. This will be done toward the end of this section, and we will find that j(x) and µ(x) satisfies the well known Valet-Fert diffusive equations 40 for continuous collinear systems and the equations of circuit theory for discrete non-collinear ones 24 . This connection is very interesting from the theoretical point of view as very different routes have been taken to obtain these equations (scattering and Random matrix theory on one side and Keldysh Green function formalism and quasiclassical approximation on the other side).…”
Section: B Random Matrix Theory (Rmt) For Magnetic Multilayersmentioning
confidence: 99%
“…An alternative popular and powerful approach in this case is the so-called circuit theory 24 where the system is discretized into various parts connected by "nodes" where one defines the spin resolved chemical potential. Circuit theory, initially derived for very resistive elements has been further extended into the "generalized" circuit theory to properly take into account the Sharvin resistance.…”
Section: F Correspondence Between Rmt and (Generalized) Circuit Theorymentioning
confidence: 99%
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“…The dependence of resistance on the angle θ between the magnetizations of the "free" layer F1 and the "polarizer" F2 [ Fig. 1(a)] is RðθÞ ¼ Rð0Þ þ ΔR sin 2 ðθ=2Þ≈ Rð0Þ þ ΔRθ 2 =4, with magnetoresistance ΔR [29]. The current-induced fluctuations discussed below are dominated by the nonuniform dynamical states.…”
mentioning
confidence: 99%